Tunnel Junctions for Multijunction Solar Cells

Nikhil Jain; Myles Steiner; John Geisz; Emmett Perl; Ryan France

Tunnel Junctions for Multijunction Solar Cells

Nikhil Jain (Inventor), Myles Steiner (Inventor), John Geisz (Inventor), Emmett Perl (Inventor), Ryan France (Inventor)

Chemistry and Nanoscience

Research output: Patent

Abstract

Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

Original language	American English
Patent number	11,527,667 B2
Filing date	13/12/22
State	Published - 2022

NREL Publication Number

NREL/PT-5900-84855

Keywords

concentration of Al
second layer quantum well
wavelengths of light

Access to Document

https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/11527667

Cite this

@misc{c91e9812968a40aea50d2affae197955,

title = "Tunnel Junctions for Multijunction Solar Cells",

abstract = "Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.",

keywords = "concentration of Al, second layer quantum well, wavelengths of light",

author = "Nikhil Jain and Myles Steiner and John Geisz and Emmett Perl and Ryan France",

year = "2022",

language = "American English",

type = "Patent",

note = "11,527,667 B2",

}

TY - PAT

T1 - Tunnel Junctions for Multijunction Solar Cells

AU - Jain, Nikhil

AU - Steiner, Myles

AU - Geisz, John

AU - Perl, Emmett

AU - France, Ryan

PY - 2022

Y1 - 2022

N2 - Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

AB - Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

KW - concentration of Al

KW - second layer quantum well

KW - wavelengths of light

M3 - Patent

M1 - 11,527,667 B2

Y2 - 2022/12/13

ER -

Tunnel Junctions for Multijunction Solar Cells

Abstract

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this