Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOxBased Passivated Contacts for High-Efficiency Silicon Solar Cells

Abhijit Kale; William Nemeth; Sanjini Nanayakkara; Harvey Guthrey; Matthew Page; Mowafak Al-Jassim; Pauls Stradins; Sumit Agarwal

doi:10.1109/PVSC.2018.8547211

Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOxBased Passivated Contacts for High-Efficiency Silicon Solar Cells

Abhijit Kale, William Nemeth, Sanjini Nanayakkara, Harvey Guthrey, Matthew Page, Mowafak Al-Jassim, Pauls Stradins, Sumit Agarwal

Colorado School of Mines

Research output: Contribution to conference › Paper › peer-review

18 Scopus Citations

Abstract

We have compared the temperature dependence of the poly-Si/SiO _x /c-Si contact performance for 1.5 and 2.2 nm thick SiO _x . The optimum annealing temperature for these two is different, likely due to the SiO _x influencing the extent of dopant diffusion into c-Si. At 1050° C, while a contact with 1.5 nm SiO _x significantly breaks up, the one with 2.2 nm SiO _x develops pinholes. Using scanning Kelvin probe microscopy, we demonstrate that there is enhanced dopant diffusion through these pinholes. Finally, using electron-beam induced current measurements, we show that pinholes affect the local passivation quality of the c-Si wafer surface.

Original language	American English
Pages	3473-3476
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2018.8547211 https://doi.org/10.1109/PVSC.2018.8547211
State	Published - 26 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

NREL Publication Number

NREL/CP-5900-71567

Keywords

electron-beam induced current
kelvin probe microscopy
passivated contact
silicon oxide
silicon solar cell

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Kale, A., Nemeth, W., Nanayakkara, S., Guthrey, H., Page, M., Al-Jassim, M., Stradins, P., & Agarwal, S. (2018). Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOxBased Passivated Contacts for High-Efficiency Silicon Solar Cells. 3473-3476. Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States. https://doi.org/10.1109/PVSC.2018.8547211, https://doi.org/10.1109/PVSC.2018.8547211

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abstract = " We have compared the temperature dependence of the poly-Si/SiO x /c-Si contact performance for 1.5 and 2.2 nm thick SiO x . The optimum annealing temperature for these two is different, likely due to the SiO x influencing the extent of dopant diffusion into c-Si. At 1050° C, while a contact with 1.5 nm SiO x significantly breaks up, the one with 2.2 nm SiO x develops pinholes. Using scanning Kelvin probe microscopy, we demonstrate that there is enhanced dopant diffusion through these pinholes. Finally, using electron-beam induced current measurements, we show that pinholes affect the local passivation quality of the c-Si wafer surface.",

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Kale, A, Nemeth, W , Nanayakkara, S , Guthrey, H , Page, M , Al-Jassim, M , Stradins, P & Agarwal, S 2018, 'Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOxBased Passivated Contacts for High-Efficiency Silicon Solar Cells', Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18 - 15/06/18 pp. 3473-3476. https://doi.org/10.1109/PVSC.2018.8547211, https://doi.org/10.1109/PVSC.2018.8547211

Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOxBased Passivated Contacts for High-Efficiency Silicon Solar Cells. / Kale, Abhijit; Nemeth, William ; Nanayakkara, Sanjini et al.
2018. 3473-3476 Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOxBased Passivated Contacts for High-Efficiency Silicon Solar Cells

AU - Kale, Abhijit

AU - Nemeth, William

AU - Nanayakkara, Sanjini

AU - Guthrey, Harvey

AU - Page, Matthew

AU - Al-Jassim, Mowafak

AU - Stradins, Pauls

AU - Agarwal, Sumit

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We have compared the temperature dependence of the poly-Si/SiO x /c-Si contact performance for 1.5 and 2.2 nm thick SiO x . The optimum annealing temperature for these two is different, likely due to the SiO x influencing the extent of dopant diffusion into c-Si. At 1050° C, while a contact with 1.5 nm SiO x significantly breaks up, the one with 2.2 nm SiO x develops pinholes. Using scanning Kelvin probe microscopy, we demonstrate that there is enhanced dopant diffusion through these pinholes. Finally, using electron-beam induced current measurements, we show that pinholes affect the local passivation quality of the c-Si wafer surface.

AB - We have compared the temperature dependence of the poly-Si/SiO x /c-Si contact performance for 1.5 and 2.2 nm thick SiO x . The optimum annealing temperature for these two is different, likely due to the SiO x influencing the extent of dopant diffusion into c-Si. At 1050° C, while a contact with 1.5 nm SiO x significantly breaks up, the one with 2.2 nm SiO x develops pinholes. Using scanning Kelvin probe microscopy, we demonstrate that there is enhanced dopant diffusion through these pinholes. Finally, using electron-beam induced current measurements, we show that pinholes affect the local passivation quality of the c-Si wafer surface.

KW - electron-beam induced current

KW - kelvin probe microscopy

KW - passivated contact

KW - silicon oxide

KW - silicon solar cell

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DO - 10.1109/PVSC.2018.8547211

M3 - Paper

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T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Kale A, Nemeth W , Nanayakkara S , Guthrey H , Page M , Al-Jassim M et al.. Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOxBased Passivated Contacts for High-Efficiency Silicon Solar Cells. 2018. Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States. doi: 10.1109/PVSC.2018.8547211, 10.1109/PVSC.2018.8547211

Tunneling or Pinholes: Understanding the Transport Mechanisms in SiOxBased Passivated Contacts for High-Efficiency Silicon Solar Cells

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Keywords

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