Two Color Blinking of Single Strain-Induced GaAs Quantum Dots

D. Bertram; M. C. Hanna; A. J. Nozik

doi:10.1063/1.123932

Two Color Blinking of Single Strain-Induced GaAs Quantum Dots

D. Bertram, M. C. Hanna, A. J. Nozik

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

42 Scopus Citations

Abstract

The photoluminescence spectra of single strain-induced quantum dots (SIQD) in the GaAs/AlGaAs system by means of photoluminescence microscopy is presented. The single SIQD linewidths are much narrower than that of an average over many QDs. Since single SIQDs are produced by stressors of slightly different shape and height, a distribution of ground state energies is observed which produce the average spectrum for multiple QDs. Evidence for excited states of single QDs has been found in the spectra at higher excitation density due to band filling effects. An unusual effect of two color blanking (TCB) of the ground and the excited state luminescence has been observed.

Original language	American English
Pages (from-to)	2666-2668
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	18
DOIs	https://doi.org/10.1063/1.123932 https://doi.org/10.1063/1.123932
State	Published - 1999

NREL Publication Number

NREL/JA-590-26246

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title = "Two Color Blinking of Single Strain-Induced GaAs Quantum Dots",

abstract = "The photoluminescence spectra of single strain-induced quantum dots (SIQD) in the GaAs/AlGaAs system by means of photoluminescence microscopy is presented. The single SIQD linewidths are much narrower than that of an average over many QDs. Since single SIQDs are produced by stressors of slightly different shape and height, a distribution of ground state energies is observed which produce the average spectrum for multiple QDs. Evidence for excited states of single QDs has been found in the spectra at higher excitation density due to band filling effects. An unusual effect of two color blanking (TCB) of the ground and the excited state luminescence has been observed.",

author = "D. Bertram and Hanna, \{M. C.\} and Nozik, \{A. J.\}",

year = "1999",

doi = "10.1063/1.123932",

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journal = "Applied Physics Letters",

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T1 - Two Color Blinking of Single Strain-Induced GaAs Quantum Dots

AU - Bertram, D.

AU - Hanna, M. C.

AU - Nozik, A. J.

PY - 1999

Y1 - 1999

N2 - The photoluminescence spectra of single strain-induced quantum dots (SIQD) in the GaAs/AlGaAs system by means of photoluminescence microscopy is presented. The single SIQD linewidths are much narrower than that of an average over many QDs. Since single SIQDs are produced by stressors of slightly different shape and height, a distribution of ground state energies is observed which produce the average spectrum for multiple QDs. Evidence for excited states of single QDs has been found in the spectra at higher excitation density due to band filling effects. An unusual effect of two color blanking (TCB) of the ground and the excited state luminescence has been observed.

AB - The photoluminescence spectra of single strain-induced quantum dots (SIQD) in the GaAs/AlGaAs system by means of photoluminescence microscopy is presented. The single SIQD linewidths are much narrower than that of an average over many QDs. Since single SIQDs are produced by stressors of slightly different shape and height, a distribution of ground state energies is observed which produce the average spectrum for multiple QDs. Evidence for excited states of single QDs has been found in the spectra at higher excitation density due to band filling effects. An unusual effect of two color blanking (TCB) of the ground and the excited state luminescence has been observed.

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DO - 10.1063/1.123932

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Two Color Blinking of Single Strain-Induced GaAs Quantum Dots

Abstract

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