Two-Dimensional Junction Identification in Multicrystalline Silicon Solar Cells by Scanning Kelvin Probe Force Microscopy

C. S. Jiang, H. R. Moutinho, R. Reedy, M. M. Al-Jassim, A. Blosse

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24 Scopus Citations

Abstract

We report on a two-dimensional investigation of the p-n junction in multicrystalline silicon solar cells using scanning Kelvin probe force microscopy (SKPFM). The junction location and depth were identified by SKPFM potential measurement and subsequent data analysis, where a procedure taking bias-voltage-induced changes in the potential and electric field was developed to avoid the effects of surface Fermi level pinning. Device simulation supported the junction identification procedure and showed a possible deviation of ∼40 nm in the junction identification. The two-dimensional electric-field images show that the shape of the junction follows the surface topography of the device, or, in other words, the junction depth is identical over the device.

Original languageAmerican English
Article numberArticle No. 104501
Number of pages4
JournalJournal of Applied Physics
Volume104
Issue number10
DOIs
StatePublished - 2008

NREL Publication Number

  • NREL/JA-520-43447

Keywords

  • junction formation
  • solar cells

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