Abstract
We report on a two-dimensional investigation of the p-n junction in multicrystalline silicon solar cells using scanning Kelvin probe force microscopy (SKPFM). The junction location and depth were identified by SKPFM potential measurement and subsequent data analysis, where a procedure taking bias-voltage-induced changes in the potential and electric field was developed to avoid the effects of surface Fermi level pinning. Device simulation supported the junction identification procedure and showed a possible deviation of ∼40 nm in the junction identification. The two-dimensional electric-field images show that the shape of the junction follows the surface topography of the device, or, in other words, the junction depth is identical over the device.
Original language | American English |
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Article number | Article No. 104501 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 104 |
Issue number | 10 |
DOIs | |
State | Published - 2008 |
NREL Publication Number
- NREL/JA-520-43447
Keywords
- junction formation
- solar cells