Two-Junction Photovoltaic Devices

Myles Steiner; Daniel Friedman; Ryan France; Asegun Henry

Two-Junction Photovoltaic Devices

Myles Steiner (Inventor), Daniel Friedman (Inventor), Ryan France (Inventor), Asegun Henry (Inventor)

Chemistry and Nanoscience

Georgia Institute of Technology

Research output: Patent

Abstract

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500.degree. C. and about 3000.degree. C.

Original language	American English
Patent number	11,367,802 B2
Filing date	21/06/22
State	Published - 2022

NREL Publication Number

NREL/PT-5900-83291

Keywords

compositionally graded buffer layer
III-V elements
thermophotovoltaic system

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/11367802

Cite this

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title = "Two-Junction Photovoltaic Devices",

abstract = "The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500.degree. C. and about 3000.degree. C.",

keywords = "compositionally graded buffer layer, III-V elements, thermophotovoltaic system",

author = "Myles Steiner and Daniel Friedman and Ryan France and Asegun Henry",

year = "2022",

language = "American English",

type = "Patent",

note = "11,367,802 B2",

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TY - PAT

T1 - Two-Junction Photovoltaic Devices

AU - Steiner, Myles

AU - Friedman, Daniel

AU - France, Ryan

AU - Henry, Asegun

PY - 2022

Y1 - 2022

N2 - The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500.degree. C. and about 3000.degree. C.

AB - The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500.degree. C. and about 3000.degree. C.

KW - compositionally graded buffer layer

KW - III-V elements

KW - thermophotovoltaic system

M3 - Patent

M1 - 11,367,802 B2

Y2 - 2022/06/21

ER -

Two-Junction Photovoltaic Devices

Abstract

NREL Publication Number

Keywords

UN SDGs

Access to Document

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Cite this