Two-Junction Photovoltaic Devices

Myles Steiner; Daniel Friedman; Ryan France; Asegun Henry

Two-Junction Photovoltaic Devices

Myles Steiner (Inventor), Daniel Friedman (Inventor), Ryan France (Inventor), Asegun Henry (Inventor)

Chemistry and Nanoscience

Georgia Institute of Technology

Research output: Patent

Abstract

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Original language	American English
Patent number	11,777,047 B2
Filing date	3/10/23
State	Published - 2023

NREL Publication Number

NREL/PT-5900-87709

Keywords

alloy
bandgap
thermophotovoltaic system

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

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Cite this

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title = "Two-Junction Photovoltaic Devices",

abstract = "The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.",

keywords = "alloy, bandgap, thermophotovoltaic system",

author = "Myles Steiner and Daniel Friedman and Ryan France and Asegun Henry",

year = "2023",

language = "American English",

type = "Patent",

note = "11,777,047 B2",

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TY - PAT

T1 - Two-Junction Photovoltaic Devices

AU - Steiner, Myles

AU - Friedman, Daniel

AU - France, Ryan

AU - Henry, Asegun

PY - 2023

Y1 - 2023

N2 - The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

AB - The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

KW - alloy

KW - bandgap

KW - thermophotovoltaic system

M3 - Patent

M1 - 11,777,047 B2

Y2 - 2023/10/03

ER -

Two-Junction Photovoltaic Devices

Abstract

NREL Publication Number

Keywords

UN SDGs

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Cite this