Abstract
The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500 degrees C and about 3000 degrees C.
Original language | American English |
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Patent number | 12,068,425 B2 |
Filing date | 20/08/24 |
State | Published - 2024 |
NREL Publication Number
- NREL/PT-5900-91350
Keywords
- bandgap
- first alloy
- thermophotovoltaic system