Abstract
The properties of large grain cuprous oxide (Cu2O) foils are explored after the implementation of a controlled postgrowth annealing process. P-type foils with a wide range of carrier density are demonstrated, enabling a promising processing window for wide bandgap solar cell devices. Hall measurements at room temperature show increased majority carrier concentration after nitrogen annealing and a reduction in mobility. The progressive change in resistivity with annealing temperature is shown, with values approaching 100 Ω.cm. Carrier recombination, measured by microwave photoconductance decay, shows a discrete change upon annealing.
Original language | American English |
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Article number | 7180296 |
Pages (from-to) | 1476-1481 |
Number of pages | 6 |
Journal | IEEE Journal of Photovoltaics |
Volume | 5 |
Issue number | 5 |
DOIs | |
State | Published - 2015 |
Bibliographical note
Publisher Copyright:© 2011-2012 IEEE.
NREL Publication Number
- NREL/JA-5J00-65116
Keywords
- Annealing
- charge carrier density
- charge carrier mobility
- copper compounds
- photoconductivity
- photovoltaic cells
- X-ray diffraction