Two-Step Annealing Study of Cuprous Oxide for Photovoltaic Applications

Steven Johnston, Michael Lloyd, Sin-Cheng Siah, Riley Brandt, James Serdy, Jasmin Hofstetter, Yun Lee, Brian McCandless, Tonio Buonassisi

Research output: Contribution to journalArticlepeer-review

4 Scopus Citations

Abstract

The properties of large grain cuprous oxide (Cu2O) foils are explored after the implementation of a controlled postgrowth annealing process. P-type foils with a wide range of carrier density are demonstrated, enabling a promising processing window for wide bandgap solar cell devices. Hall measurements at room temperature show increased majority carrier concentration after nitrogen annealing and a reduction in mobility. The progressive change in resistivity with annealing temperature is shown, with values approaching 100 Ω.cm. Carrier recombination, measured by microwave photoconductance decay, shows a discrete change upon annealing.

Original languageAmerican English
Article number7180296
Pages (from-to)1476-1481
Number of pages6
JournalIEEE Journal of Photovoltaics
Volume5
Issue number5
DOIs
StatePublished - 2015

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

NREL Publication Number

  • NREL/JA-5J00-65116

Keywords

  • Annealing
  • charge carrier density
  • charge carrier mobility
  • copper compounds
  • photoconductivity
  • photovoltaic cells
  • X-ray diffraction

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