Two-Step Annealing Study of Cuprous Oxide for Photovoltaic Applications

Steven Johnston; Michael Lloyd; Sin-Cheng Siah; Riley Brandt; James Serdy; Jasmin Hofstetter; Yun Lee; Brian McCandless; Tonio Buonassisi

doi:10.1109/JPHOTOV.2015.2455332

Two-Step Annealing Study of Cuprous Oxide for Photovoltaic Applications

Steven Johnston
, Michael Lloyd
, Sin-Cheng Siah
, Riley Brandt
, James Serdy
, Jasmin Hofstetter
, Yun Lee
, Brian McCandless
, Tonio Buonassisi

Materials Science

Research output: Contribution to journal › Article › peer-review

6 Scopus Citations

Abstract

The properties of large grain cuprous oxide (Cu₂O) foils are explored after the implementation of a controlled postgrowth annealing process. P-type foils with a wide range of carrier density are demonstrated, enabling a promising processing window for wide bandgap solar cell devices. Hall measurements at room temperature show increased majority carrier concentration after nitrogen annealing and a reduction in mobility. The progressive change in resistivity with annealing temperature is shown, with values approaching 100 Ω.cm. Carrier recombination, measured by microwave photoconductance decay, shows a discrete change upon annealing.

Original language	American English
Article number	7180296
Pages (from-to)	1476-1481
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	5
Issue number	5
DOIs	https://doi.org/10.1109/JPHOTOV.2015.2455332 https://doi.org/10.1109/JPHOTOV.2015.2455332
State	Published - 2015

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

NLR Publication Number

NREL/JA-5J00-65116

Keywords

Annealing
charge carrier density
charge carrier mobility
copper compounds
photoconductivity
photovoltaic cells
X-ray diffraction

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title = "Two-Step Annealing Study of Cuprous Oxide for Photovoltaic Applications",

abstract = "The properties of large grain cuprous oxide (Cu2O) foils are explored after the implementation of a controlled postgrowth annealing process. P-type foils with a wide range of carrier density are demonstrated, enabling a promising processing window for wide bandgap solar cell devices. Hall measurements at room temperature show increased majority carrier concentration after nitrogen annealing and a reduction in mobility. The progressive change in resistivity with annealing temperature is shown, with values approaching 100 Ω.cm. Carrier recombination, measured by microwave photoconductance decay, shows a discrete change upon annealing.",

keywords = "Annealing, charge carrier density, charge carrier mobility, copper compounds, photoconductivity, photovoltaic cells, X-ray diffraction",

author = "Steven Johnston and Michael Lloyd and Sin-Cheng Siah and Riley Brandt and James Serdy and Jasmin Hofstetter and Yun Lee and Brian McCandless and Tonio Buonassisi",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2015",

doi = "10.1109/JPHOTOV.2015.2455332",

language = "American English",

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pages = "1476--1481",

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T1 - Two-Step Annealing Study of Cuprous Oxide for Photovoltaic Applications

AU - Johnston, Steven

AU - Lloyd, Michael

AU - Siah, Sin-Cheng

AU - Brandt, Riley

AU - Serdy, James

AU - Hofstetter, Jasmin

AU - Lee, Yun

AU - McCandless, Brian

AU - Buonassisi, Tonio

PY - 2015

Y1 - 2015

N2 - The properties of large grain cuprous oxide (Cu2O) foils are explored after the implementation of a controlled postgrowth annealing process. P-type foils with a wide range of carrier density are demonstrated, enabling a promising processing window for wide bandgap solar cell devices. Hall measurements at room temperature show increased majority carrier concentration after nitrogen annealing and a reduction in mobility. The progressive change in resistivity with annealing temperature is shown, with values approaching 100 Ω.cm. Carrier recombination, measured by microwave photoconductance decay, shows a discrete change upon annealing.

AB - The properties of large grain cuprous oxide (Cu2O) foils are explored after the implementation of a controlled postgrowth annealing process. P-type foils with a wide range of carrier density are demonstrated, enabling a promising processing window for wide bandgap solar cell devices. Hall measurements at room temperature show increased majority carrier concentration after nitrogen annealing and a reduction in mobility. The progressive change in resistivity with annealing temperature is shown, with values approaching 100 Ω.cm. Carrier recombination, measured by microwave photoconductance decay, shows a discrete change upon annealing.

KW - Annealing

KW - charge carrier density

KW - charge carrier mobility

KW - copper compounds

KW - photoconductivity

KW - photovoltaic cells

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/84940048687

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DO - 10.1109/JPHOTOV.2015.2455332

M3 - Article

AN - SCOPUS:84940048687

SN - 2156-3381

VL - 5

SP - 1476

EP - 1481

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 5

M1 - 7180296

ER -

Two-Step Annealing Study of Cuprous Oxide for Photovoltaic Applications

Abstract

Bibliographical note

NLR Publication Number

Keywords

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