Two-Step Capacitance Transients from an Oxygen Impurity Defect: Paper No. 1066-A10-03

Two-Step Capacitance Transients from an Oxygen Impurity Defect: Paper No. 1066-A10-03

Research output: Contribution to conference › Paper

Original language	American English
Pages	259-264
Number of pages	6
State	Published - 2008
Event	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008: Materials Research Society Symposium - San Francisco, California Duration: 25 Mar 2008 → 28 Mar 2008

Conference

Conference	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008: Materials Research Society Symposium
City	San Francisco, California
Period	25/03/08 → 28/03/08

NREL Publication Number

NREL/CP-520-46159

Keywords

basic sciences
materials science

Cite this

@conference{a9cf8d2e731c49189ca0c5b0f45e7f18,

title = "Two-Step Capacitance Transients from an Oxygen Impurity Defect: Paper No. 1066-A10-03",

keywords = "basic sciences, materials science",

author = "NREL",

year = "2008",

language = "American English",

pages = "259--264",

note = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008: Materials Research Society Symposium ; Conference date: 25-03-2008 Through 28-03-2008",

}