Abstract
A novel bonding approach with an interface consisting of a metal and dielectric is developed, and a "pillar-array" metal topology is proposed for minimal optical and electrical loss at the interface. This enables a fully lattice-matched two-terminal, four-junction device that consists of an inverted top two-junction (2J) cell with 1.85-eV GaInP/1.42-eV GaAs, and an upright lower 2J cell with ~1-eV GaInAsP/0.74-eV GaInAs aimed for concentrator applications. The fabrication process and simulation of the metal topology are discussed along with the results of GaAs/GaInAs 2J and (GaInP-+-GaAs)/GaInAs three-junction bonded cells. Bonding-related issues are also addressed along with optical coupling across the bonding interface.
Original language | American English |
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Pages (from-to) | 593-599 |
Number of pages | 7 |
Journal | Progress in Photovoltaics: Research and Applications |
Volume | 23 |
Issue number | 5 |
DOIs | |
State | Published - 2015 |
Bibliographical note
Publisher Copyright:Copyright © 2014 John Wiley & Sons, Ltd.
NREL Publication Number
- NREL/JA-5J00-64528
Keywords
- concentrator photovoltaic
- device bonding
- III-V semiconductor
- multijunction
- photovoltaic cells
- thermal compression bond