Type II - Type I Transition in (GaX)n/(InX)n (001) Superlattices (X=P,Sb) as a Function of Period n

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    Coherently strained GaX/InX interfaces (X=P, Sb) lattice matched to a (001)-oriented substrate are predicted to have a type-I band-gap alignment, with both the valence-band maximum and the conduction-band minimum (CBM) located on the In-rich material. At the same time, the CBM wave function of short-period (GaX)n/(InX)n superlattices is predicted to have larger amplitude on the GaX layers,leading to a type-II alignment. We show that (i) a type-II --type-I transition occurs around the period n=4; (ii) this transition has a different origin with respect to the well-known case of GaAs/AlAs superlattices; (iii) the band structure of ultrathin superlattices cannot be explained in terms of a simple effective-mass theory; (iv) the wave-function localization in short-period superlatticesis determined by the atomic orbital energies.
    Original languageAmerican English
    Pages (from-to)8094-8097
    Number of pages4
    JournalPhysical Review B
    Issue number11
    StatePublished - 1994

    NREL Publication Number

    • NREL/TP-451-6613


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