Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon

S. L. Dexheimer; C. P. Zhang; J. Liu; J. E. Young; B. P. Nelson

doi:10.1557/proc-715-a2.1

Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon

S. L. Dexheimer, C. P. Zhang, J. Liu, J. E. Young, B. P. Nelson

Materials, Chemical, and Computational Science Research Operations

Washington State University Pullman

Research output: Contribution to conference › Paper › peer-review

9 Scopus Citations

Abstract

We present detailed studies of the initial relaxation processes of photoexcited carriers in hydrogenated amorphous silicon. We have carried out time-resolved measurements of the photoexcited carrier response in HWCVD a-Si:H thin films using a wavelength-resolved femtosecond pump-probe technique, in which an intense 35-fs pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in optical properties as a function of time delay following the pump pulse. Measurements of the transient optical absorbance were carried out as a function of the density of excited carriers, sample temperature, and probe wavelength. These studies indicate fast carrier thermalization via phonon emission on a ∼150 fs time scale and rapid phonon equilibrium on a ∼230 fs time scale.

Original language	American English
Pages	269-274
Number of pages	6
DOIs	https://doi.org/10.1557/proc-715-a2.1
State	Published - 2002
Event	Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium - San Francisco, California Duration: 2 Apr 2002 → 5 Apr 2002

Conference

Conference	Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium
City	San Francisco, California
Period	2/04/02 → 5/04/02

NREL Publication Number

NREL/CP-520-34496

Access to Document

10.1557/proc-715-a2.1

Cite this

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title = "Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon",

abstract = "We present detailed studies of the initial relaxation processes of photoexcited carriers in hydrogenated amorphous silicon. We have carried out time-resolved measurements of the photoexcited carrier response in HWCVD a-Si:H thin films using a wavelength-resolved femtosecond pump-probe technique, in which an intense 35-fs pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in optical properties as a function of time delay following the pump pulse. Measurements of the transient optical absorbance were carried out as a function of the density of excited carriers, sample temperature, and probe wavelength. These studies indicate fast carrier thermalization via phonon emission on a ∼150 fs time scale and rapid phonon equilibrium on a ∼230 fs time scale.",

author = "Dexheimer, {S. L.} and Zhang, {C. P.} and J. Liu and Young, {J. E.} and Nelson, {B. P.}",

year = "2002",

doi = "10.1557/proc-715-a2.1",

language = "American English",

pages = "269--274",

note = "Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium ; Conference date: 02-04-2002 Through 05-04-2002",

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T1 - Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon

AU - Dexheimer, S. L.

AU - Zhang, C. P.

AU - Liu, J.

AU - Young, J. E.

AU - Nelson, B. P.

PY - 2002

Y1 - 2002

N2 - We present detailed studies of the initial relaxation processes of photoexcited carriers in hydrogenated amorphous silicon. We have carried out time-resolved measurements of the photoexcited carrier response in HWCVD a-Si:H thin films using a wavelength-resolved femtosecond pump-probe technique, in which an intense 35-fs pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in optical properties as a function of time delay following the pump pulse. Measurements of the transient optical absorbance were carried out as a function of the density of excited carriers, sample temperature, and probe wavelength. These studies indicate fast carrier thermalization via phonon emission on a ∼150 fs time scale and rapid phonon equilibrium on a ∼230 fs time scale.

AB - We present detailed studies of the initial relaxation processes of photoexcited carriers in hydrogenated amorphous silicon. We have carried out time-resolved measurements of the photoexcited carrier response in HWCVD a-Si:H thin films using a wavelength-resolved femtosecond pump-probe technique, in which an intense 35-fs pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in optical properties as a function of time delay following the pump pulse. Measurements of the transient optical absorbance were carried out as a function of the density of excited carriers, sample temperature, and probe wavelength. These studies indicate fast carrier thermalization via phonon emission on a ∼150 fs time scale and rapid phonon equilibrium on a ∼230 fs time scale.

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DO - 10.1557/proc-715-a2.1

M3 - Paper

AN - SCOPUS:0036930174

SP - 269

EP - 274

T2 - Amorphous and Heterogeneous Silicon-Based Films 2002: Materials Research Society Symposium

Y2 - 2 April 2002 through 5 April 2002

ER -

Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon

Abstract

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