Ultrahigh-Crystalline-Quality Silicon Pillars Formed by Millimeter-Wave Annealing of Amorphous Silicon on Glass

Fude Liu, Kim M. Jones, Yueqin Xu, William Nemeth, John Lohr, Jeff Neilson, Manuel J. Romero, Mowafak M. Al-Jassim, David L. Young

Research output: Contribution to journalArticlepeer-review

4 Scopus Citations


Unique 3D silicon pillar structures that were formed by millisecond-long single-pulse annealing of 110 GHz millimeter-wave radiation incident upon intrinsic-amorphous silicon (a-Si) thin films deposited on glass by hot-wire chemical vapor deposition (HWCVD) were investigated. SiO2/glass samples were annealed with a millimeter-wave power density of approximately 40kW cm-2 and a pulse length that varied from 1 to 8.5 ms. The microscopic images show that the pillars have a very high crystallinity without structural defects. The Si pillar is also found to be covered by a thin a-SiO2 of 80 nm and a relatively thick nc-Si of 950 nm layers on the top and a thin nc-Si layer of 120 nm and a thick SiO2 layer on the sides. The melt Si pillars are found to retain the egg-like shapes after they crystallize due to high cooling rates.

Original languageAmerican English
Pages (from-to)3002-3006
Number of pages5
JournalAdvanced Materials
Issue number29
StatePublished - 2009

NREL Publication Number

  • NREL/JA-520-46618


  • basic sciences
  • materials science
  • silicon


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