Ultralong Minority-Carrier Lifetime Epitaxial GaAs by Photon Recycling

R. K. Ahrenkiel, D. J. Dunlavy, Brian Keyes, S. M. Vernon, T. M. Dixon, S. P. Tobin, K. L. Miller, R. E. Hayes

Research output: Contribution to journalArticlepeer-review

84 Scopus Citations

Abstract

The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.

Original languageAmerican English
Pages (from-to)1088-1090
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number11
DOIs
StatePublished - 1989

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado; Spire Corporation, Bedford, Massachusetts; and University of Colorado, Boulder, Colorado

NREL Publication Number

  • ACNR/JA-213-11353

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