Ultralong Minority-Carrier Lifetime Epitaxial GaAs by Photon Recycling

R. K. Ahrenkiel; D. J. Dunlavy; Brian Keyes; S. M. Vernon; T. M. Dixon; S. P. Tobin; K. L. Miller; R. E. Hayes

doi:10.1063/1.101713

Ultralong Minority-Carrier Lifetime Epitaxial GaAs by Photon Recycling

R. K. Ahrenkiel, D. J. Dunlavy, Brian Keyes, S. M. Vernon, T. M. Dixon, S. P. Tobin, K. L. Miller, R. E. Hayes

Research output: Contribution to journal › Article › peer-review

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Abstract

The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.

Original language	American English
Pages (from-to)	1088-1090
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	11
DOIs	https://doi.org/10.1063/1.101713 https://doi.org/10.1063/1.101713
State	Published - 1989

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado; Spire Corporation, Bedford, Massachusetts; and University of Colorado, Boulder, Colorado

NREL Publication Number

ACNR/JA-213-11353

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title = "Ultralong Minority-Carrier Lifetime Epitaxial GaAs by Photon Recycling",

abstract = "The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.",

author = "Ahrenkiel, {R. K.} and Dunlavy, {D. J.} and Brian Keyes and Vernon, {S. M.} and Dixon, {T. M.} and Tobin, {S. P.} and Miller, {K. L.} and Hayes, {R. E.}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado; Spire Corporation, Bedford, Massachusetts; and University of Colorado, Boulder, Colorado",

year = "1989",

doi = "10.1063/1.101713",

language = "American English",

volume = "55",

pages = "1088--1090",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

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T1 - Ultralong Minority-Carrier Lifetime Epitaxial GaAs by Photon Recycling

AU - Ahrenkiel, R. K.

AU - Dunlavy, D. J.

AU - Keyes, Brian

AU - Vernon, S. M.

AU - Dixon, T. M.

AU - Tobin, S. P.

AU - Miller, K. L.

AU - Hayes, R. E.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado; Spire Corporation, Bedford, Massachusetts; and University of Colorado, Boulder, Colorado

PY - 1989

Y1 - 1989

N2 - The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.

AB - The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.

UR - http://www.scopus.com/inward/record.url?scp=0012028282&partnerID=8YFLogxK

U2 - 10.1063/1.101713

DO - 10.1063/1.101713

M3 - Article

AN - SCOPUS:0012028282

SN - 0003-6951

VL - 55

SP - 1088

EP - 1090

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Ultralong Minority-Carrier Lifetime Epitaxial GaAs by Photon Recycling

Abstract

Bibliographical note

NREL Publication Number

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