Ultralow Recombination Velocity at Ga0.5In0.5P/GaAs Heterointerfaces

J. M. Olson; R. K. Ahrenkiel; D. J. Dunlavy; Brian Keyes; A. E. Kibbler

doi:10.1063/1.101656

Ultralow Recombination Velocity at Ga0.5In0.5P/GaAs Heterointerfaces

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, Brian Keyes, A. E. Kibbler

National Renewable Energy Laboratory

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Abstract

Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga_0.5In_0.5P/GaAs/Ga_0.5In _0.5P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al_0.4Ga _0.6As/GaAs and Al_0.5In_0.5P/GaAs lattice-matched heterointerfaces were also examined. For the Ga_0.5In _0.5P/GaAs heterostructure, we show that the recombination velocity at a Ga_0.5In_0.5P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 μs have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as T^1.59, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al_0.4Ga_0.6As/GaAs and Al _0.5In_0.5P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.

Original language	American English
Pages (from-to)	1208-1210
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	12
DOIs	https://doi.org/10.1063/1.101656 https://doi.org/10.1063/1.101656
State	Published - 1989

NREL Publication Number

ACNR/JA-212-11315

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@article{6ed54a1a64a84e0cb0d23ab30a2a2575,

title = "Ultralow Recombination Velocity at Ga0.5In0.5P/GaAs Heterointerfaces",

abstract = "Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In 0.5P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al0.4Ga 0.6As/GaAs and Al0.5In0.5P/GaAs lattice-matched heterointerfaces were also examined. For the Ga0.5In 0.5P/GaAs heterostructure, we show that the recombination velocity at a Ga0.5In0.5P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 μs have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as T1.59, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al0.4Ga0.6As/GaAs and Al 0.5In0.5P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.",

author = "Olson, {J. M.} and Ahrenkiel, {R. K.} and Dunlavy, {D. J.} and Brian Keyes and Kibbler, {A. E.}",

year = "1989",

doi = "10.1063/1.101656",

language = "American English",

volume = "55",

pages = "1208--1210",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Ultralow Recombination Velocity at Ga0.5In0.5P/GaAs Heterointerfaces

AU - Olson, J. M.

AU - Ahrenkiel, R. K.

AU - Dunlavy, D. J.

AU - Keyes, Brian

AU - Kibbler, A. E.

PY - 1989

Y1 - 1989

N2 - Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In 0.5P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al0.4Ga 0.6As/GaAs and Al0.5In0.5P/GaAs lattice-matched heterointerfaces were also examined. For the Ga0.5In 0.5P/GaAs heterostructure, we show that the recombination velocity at a Ga0.5In0.5P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 μs have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as T1.59, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al0.4Ga0.6As/GaAs and Al 0.5In0.5P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.

AB - Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In 0.5P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al0.4Ga 0.6As/GaAs and Al0.5In0.5P/GaAs lattice-matched heterointerfaces were also examined. For the Ga0.5In 0.5P/GaAs heterostructure, we show that the recombination velocity at a Ga0.5In0.5P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 μs have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as T1.59, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al0.4Ga0.6As/GaAs and Al 0.5In0.5P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.

UR - http://www.scopus.com/inward/record.url?scp=21544458115&partnerID=8YFLogxK

U2 - 10.1063/1.101656

DO - 10.1063/1.101656

M3 - Article

AN - SCOPUS:21544458115

SN - 0003-6951

VL - 55

SP - 1208

EP - 1210

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Ultralow Recombination Velocity at Ga0.5In0.5P/GaAs Heterointerfaces

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