Ultralow Recombination Velocity at Ga0.5In0.5P/GaAs Heterointerfaces

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, Brian Keyes, A. E. Kibbler

Research output: Contribution to journalArticlepeer-review

268 Scopus Citations


Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In 0.5P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al0.4Ga 0.6As/GaAs and Al0.5In0.5P/GaAs lattice-matched heterointerfaces were also examined. For the Ga0.5In 0.5P/GaAs heterostructure, we show that the recombination velocity at a Ga0.5In0.5P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 μs have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as T1.59, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al0.4Ga0.6As/GaAs and Al 0.5In0.5P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.

Original languageAmerican English
Pages (from-to)1208-1210
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - 1989

NREL Publication Number

  • ACNR/JA-212-11315


Dive into the research topics of 'Ultralow Recombination Velocity at Ga0.5In0.5P/GaAs Heterointerfaces'. Together they form a unique fingerprint.

Cite this