Ultrasound Defect Engineering of Transition Metals Via Metal-Acceptor Pairs in Silicon

Ultrasound Defect Engineering of Transition Metals Via Metal-Acceptor Pairs in Silicon

Research output: Contribution to conference › Paper

Original language	American English
Pages	647-652
Number of pages	6
State	Published - 1995
Event	Defect and Impurity Engineered Semiconductors and Devices: Materials Research Society Symposium - San Francisco, California Duration: 17 Apr 1995 → 21 Apr 1995

Conference

Conference	Defect and Impurity Engineered Semiconductors and Devices: Materials Research Society Symposium
City	San Francisco, California
Period	17/04/95 → 21/04/95

Bibliographical note

Work performed by the University of South Florida, Tampa, Florida

NREL Publication Number

NREL/CP-20542

Cite this

@conference{41907a21b0214064ae662744459145f3,

title = "Ultrasound Defect Engineering of Transition Metals Via Metal-Acceptor Pairs in Silicon",

author = "NREL",

note = "Work performed by the University of South Florida, Tampa, Florida; Defect and Impurity Engineered Semiconductors and Devices: Materials Research Society Symposium ; Conference date: 17-04-1995 Through 21-04-1995",

year = "1995",

language = "American English",

pages = "647--652",

}

TY - CONF

T1 - Ultrasound Defect Engineering of Transition Metals Via Metal-Acceptor Pairs in Silicon

AU - NREL, null

N1 - Work performed by the University of South Florida, Tampa, Florida

PY - 1995

Y1 - 1995

M3 - Paper

SP - 647

EP - 652

T2 - Defect and Impurity Engineered Semiconductors and Devices: Materials Research Society Symposium

Y2 - 17 April 1995 through 21 April 1995

ER -