Ultraviolet Laser Activation of Phosphorus-Doped Polysilicon Layers for Crystalline Silicon Solar Cells: Article No. 2400542

Engineering

• Crystalline Silicon Solar Cell 100%
• Polysilicon 100%
• Dopant Concentration 66%
• Dopants 33%
• Cell Design 33%
• Back Contact 33%
• Crystalline Silicon 33%
• Si Interface 33%
• Contact Solar Cell 33%
• Silicon Solar Cell 33%
• Laser Fluence 33%
• Dopant Activation 33%
• Open Circuit Voltage 33%
• Solar Cell 33%
• Pulsed Laser 33%

Material Science

• Doping (Additives) 100%
• Crystalline Silicon Solar Cell 100%
• Solar Cell 50%
• Silicon 50%
• Electronic Circuit 25%
• Electrical Resistivity 25%
• Silicon Solar Cell 25%