Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells

Matthew Hartenstein; William Nemeth; Vincenzo LaSalvia; Matthew Page; David Young; Pauls Stradins; Steven Harvey; Sumit Agarwal

doi:10.1109/PVSC40753.2019.8980607

Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells

Matthew Hartenstein, William Nemeth, Vincenzo LaSalvia, Matthew Page, David Young, Pauls Stradins, Steven Harvey, Sumit Agarwal

Colorado School of Mines

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

We investigate factors that are critical for the performance of interdigitated back contact (IBC) solar cells based on polycrystalline silicon (poly-Si) passivated contacts. During patterning of doped lines using direct plasma deposition through a shadow mask, we show that the intrinsic poly-Si gap becomes contaminated with dopants, leading to shunting. Possible contamination mechanisms during masked deposition and high- temperature annealing are tested. Strategies developed to mitigate the contamination, such as reactive ion etching after deposition and amorphous to poly-Si crystallization in oxygen, will lead to improved IBC fabrication methods.

Original language	American English
Pages	2207-2210
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980607 https://doi.org/10.1109/PVSC40753.2019.8980607
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5900-74028

Keywords

amorphous materials
pattern formation
photovoltaic cells
plasma materials processing
silicon
surface contamination

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Hartenstein, M., Nemeth, W., LaSalvia, V., Page, M., Young, D., Stradins, P., Harvey, S., & Agarwal, S. (2019). Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells. 2207-2210. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. https://doi.org/10.1109/PVSC40753.2019.8980607, https://doi.org/10.1109/PVSC40753.2019.8980607

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abstract = "We investigate factors that are critical for the performance of interdigitated back contact (IBC) solar cells based on polycrystalline silicon (poly-Si) passivated contacts. During patterning of doped lines using direct plasma deposition through a shadow mask, we show that the intrinsic poly-Si gap becomes contaminated with dopants, leading to shunting. Possible contamination mechanisms during masked deposition and high- temperature annealing are tested. Strategies developed to mitigate the contamination, such as reactive ion etching after deposition and amorphous to poly-Si crystallization in oxygen, will lead to improved IBC fabrication methods.",

keywords = "amorphous materials, pattern formation, photovoltaic cells, plasma materials processing, silicon, surface contamination",

author = "Matthew Hartenstein and William Nemeth and Vincenzo LaSalvia and Matthew Page and David Young and Pauls Stradins and Steven Harvey and Sumit Agarwal",

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doi = "10.1109/PVSC40753.2019.8980607",

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Hartenstein, M, Nemeth, W, LaSalvia, V, Page, M , Young, D , Stradins, P , Harvey, S & Agarwal, S 2019, 'Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 2207-2210. https://doi.org/10.1109/PVSC40753.2019.8980607, https://doi.org/10.1109/PVSC40753.2019.8980607

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T1 - Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells

AU - Hartenstein, Matthew

AU - Nemeth, William

AU - LaSalvia, Vincenzo

AU - Page, Matthew

AU - Young, David

AU - Stradins, Pauls

AU - Harvey, Steven

AU - Agarwal, Sumit

PY - 2019/6

Y1 - 2019/6

N2 - We investigate factors that are critical for the performance of interdigitated back contact (IBC) solar cells based on polycrystalline silicon (poly-Si) passivated contacts. During patterning of doped lines using direct plasma deposition through a shadow mask, we show that the intrinsic poly-Si gap becomes contaminated with dopants, leading to shunting. Possible contamination mechanisms during masked deposition and high- temperature annealing are tested. Strategies developed to mitigate the contamination, such as reactive ion etching after deposition and amorphous to poly-Si crystallization in oxygen, will lead to improved IBC fabrication methods.

AB - We investigate factors that are critical for the performance of interdigitated back contact (IBC) solar cells based on polycrystalline silicon (poly-Si) passivated contacts. During patterning of doped lines using direct plasma deposition through a shadow mask, we show that the intrinsic poly-Si gap becomes contaminated with dopants, leading to shunting. Possible contamination mechanisms during masked deposition and high- temperature annealing are tested. Strategies developed to mitigate the contamination, such as reactive ion etching after deposition and amorphous to poly-Si crystallization in oxygen, will lead to improved IBC fabrication methods.

KW - amorphous materials

KW - pattern formation

KW - photovoltaic cells

KW - plasma materials processing

KW - silicon

KW - surface contamination

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DO - 10.1109/PVSC40753.2019.8980607

M3 - Paper

AN - SCOPUS:85081599774

SP - 2207

EP - 2210

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Understanding and Mitigating the Contamination of Intrinsic poly-Si Gaps in Passivated IBC Solar Cells

Abstract

Conference

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Keywords

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