@misc{905d66c8b2474b4cb8aebc8263e79d24,
title = "Understanding Hydrogen Passivation Mechanism in Poly-Si Passivating Contacts: Insights from Effusion Studies",
abstract = "Silicon PV is the dominant PV technology, and captures >95% world market share, supporting -100 GW/year. Diffused and passivated pn junctions along with other rear side passivation technologies are the mainstream technologies and will continue to remain so in the coming decades. Passivated contacts, using tunnel oxide passivation stacks at the rear side, will gain market share from about 10% in 2022 up to 58% within the next 10 years. Most mature approaches use passivating layers of hydrogenated Al2O3 and SiNx. LPCVD SiNx provides less hydrogen for passivation compared to PECVD SiNx but can retain the hydrogen up to higher temperatures which is beneficial for firing. Although SiNx provides large amount of hydrogen, this doesn't necessarily translate to good passivation. AlOx:H contributes to retaining H at higher temperatures. Water molecules are also detected during H-effusion and may play a role in passivation of the oxide/wafer interface.",
keywords = "effusion study, hydrogen passivation, LPCVD, passivating contacts, PECVD, photovoltaic, poly-Si, PV",
author = "Suchismita Mitra and Matthew Hartenstein and Harvey Guthrey and William Nemeth and Steve Harvey and David Young and Sumit Agarwal and Paul Stradins",
year = "2023",
language = "American English",
series = "Presented at 30th Annual NREL Silicon Workshop, 30 July - 2 August 2023, Breckenridge, Colorado",
type = "Other",
}
