Understanding Improvements in Coalesced Epilayers Grown over Nanopatterned Substrates

John Mangum; San Theingi; William McMahon; Emily Warren

doi:10.1109/PVSC43889.2021.9518463

Understanding Improvements in Coalesced Epilayers Grown over Nanopatterned Substrates

John Mangum, San Theingi, William McMahon, Emily Warren

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

Nanopatterned substrates provide opportunities for reducing costs of high-efficiency III-V devices through methods such as substrate reuse and growth on cheaper substrates. In this work, we aim to better understand some of the fundamental challenges of growing high quality III-V material on nanopatterned substrates. Through specific pattern orientations and control of overgrowth morphology, we report that smooth and defect-free coalesced III-V epilayers are attainable over nanopatterned GaAs substrates.

Original language	American English
Pages	1377-1378
Number of pages	2
DOIs	https://doi.org/10.1109/PVSC43889.2021.9518463 https://doi.org/10.1109/PVSC43889.2021.9518463
State	Published - 20 Jun 2021
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 20 Jun 2021 → 25 Jun 2021

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	20/06/21 → 25/06/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

NREL Publication Number

NREL/CP-5900-78961

Keywords

coalescence
defect characterization
III-V
nanopatterned substrates

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@conference{50b766d810f84a628d1c7221aa0898d1,

title = "Understanding Improvements in Coalesced Epilayers Grown over Nanopatterned Substrates",

abstract = "Nanopatterned substrates provide opportunities for reducing costs of high-efficiency III-V devices through methods such as substrate reuse and growth on cheaper substrates. In this work, we aim to better understand some of the fundamental challenges of growing high quality III-V material on nanopatterned substrates. Through specific pattern orientations and control of overgrowth morphology, we report that smooth and defect-free coalesced III-V epilayers are attainable over nanopatterned GaAs substrates.",

keywords = "coalescence, defect characterization, III-V, nanopatterned substrates",

author = "John Mangum and San Theingi and William McMahon and Emily Warren",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",

year = "2021",

month = jun,

day = "20",

doi = "10.1109/PVSC43889.2021.9518463",

language = "American English",

pages = "1377--1378",

}

Mangum, J , Theingi, S , McMahon, W & Warren, E 2021, 'Understanding Improvements in Coalesced Epilayers Grown over Nanopatterned Substrates', Paper presented at 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States, 20/06/21 - 25/06/21 pp. 1377-1378. https://doi.org/10.1109/PVSC43889.2021.9518463, https://doi.org/10.1109/PVSC43889.2021.9518463

TY - CONF

T1 - Understanding Improvements in Coalesced Epilayers Grown over Nanopatterned Substrates

AU - Mangum, John

AU - Theingi, San

AU - McMahon, William

AU - Warren, Emily

PY - 2021/6/20

Y1 - 2021/6/20

N2 - Nanopatterned substrates provide opportunities for reducing costs of high-efficiency III-V devices through methods such as substrate reuse and growth on cheaper substrates. In this work, we aim to better understand some of the fundamental challenges of growing high quality III-V material on nanopatterned substrates. Through specific pattern orientations and control of overgrowth morphology, we report that smooth and defect-free coalesced III-V epilayers are attainable over nanopatterned GaAs substrates.

AB - Nanopatterned substrates provide opportunities for reducing costs of high-efficiency III-V devices through methods such as substrate reuse and growth on cheaper substrates. In this work, we aim to better understand some of the fundamental challenges of growing high quality III-V material on nanopatterned substrates. Through specific pattern orientations and control of overgrowth morphology, we report that smooth and defect-free coalesced III-V epilayers are attainable over nanopatterned GaAs substrates.

KW - coalescence

KW - defect characterization

KW - III-V

KW - nanopatterned substrates

UR - http://www.scopus.com/inward/record.url?scp=85115972446&partnerID=8YFLogxK

U2 - 10.1109/PVSC43889.2021.9518463

DO - 10.1109/PVSC43889.2021.9518463

M3 - Paper

AN - SCOPUS:85115972446

SP - 1377

EP - 1378

T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

Y2 - 20 June 2021 through 25 June 2021

ER -

Understanding Improvements in Coalesced Epilayers Grown over Nanopatterned Substrates

Abstract

Conference

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NREL Publication Number

Keywords

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