Understanding Light-Induced Degradation of c-Si Solar Cells: Preprint

Research output: Contribution to conferencePaper

Abstract

We discuss results of our investigations toward understanding bulk and surface components of light-induced degradation (LID) in low-Fe c-Si solar cells. The bulk effects, arising from boron-oxygen defects, are determined by comparing degradation of cell parameters and their thermal recovery, with that of the minority-carrier lifetime (..tau..) in sister wafers. We found that the recovery of..tau.. in wafers takes a much longer annealing time compared to that of the cell. We also show that cells having SiN:H coating experience a surface degradation (ascribed to surface recombination). The surface LID is seen as an increase in the q/2kT component of the dark saturation current (J02). The surface LID does not recover fully upon annealing and is attributed to degradation of the SiN:H-Siinterface. This behavior is also exhibited by mc-Si cells that have very low oxygen content and do not show any bulk degradation.
Original languageAmerican English
Number of pages8
StatePublished - 2012
Event2012 IEEE Photovoltaic Specialists Conference - Austin, Texas
Duration: 3 Jun 20128 Jun 2012

Conference

Conference2012 IEEE Photovoltaic Specialists Conference
CityAustin, Texas
Period3/06/128/06/12

NREL Publication Number

  • NREL/CP-5200-54200

Keywords

  • annealing
  • bulk
  • crystalline silicon (x-Si) (c-Si)
  • light-induced degradation
  • minority-carrier lifetimes
  • solar cells
  • surface

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