@misc{269bf866ff4149d8b6c7113fc3d31e7f,
title = "Understanding Microscopic Mechanisms of LeTID and LID and their Unifying Features by Electron Paramagnetic Resonance",
abstract = "LID degradation involves not only creation of ~ 10^12 cm^-3 recombination centers, but also ~ 10^16 cm^-3 shallow negative-U traps. In Ga-doped Si, LID EPR defects don't appear, but some traps are still created. LeTID: Si DB and H-hyperfine EPR signatures. We postulate that the defect responsible for LeTID is a partially hydrogenated (multivacancy) with a Si dangling bond and H in the vicinity. O involvement is possible yet unclear. We prove that H is related to the structure of the LeTID defect with isotope experiments and its EPR signal is comparable and linear with the Si DB signal upon LeTID degradation. Working on simulating these results with DFT to obtain more detailed defect structure.",
keywords = "Cz Si, dangling bond, electron paramagnetic resonance, EPR, Ga-doped, hydrogen hyperfine, LeTID, LID, light- and elevated temperature-induced degradation, light-induced degradation, photovoltaic, PV",
author = "Abigail Meyer and Taylor, {P. Craig} and Chirag Mule and Sumit Agarwal and Paul Stradins",
year = "2022",
language = "American English",
series = "Presented at the 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33), 13-17 November 2022, Nagoya, Japan",
type = "Other",
}
