Understanding the Origin of Tabula Rasa-Induced Defects in n-Type Cz c-Si: The Case of Nitrogen Atmosphere: Article No. 112159

Engineering

• Capture Cross Section 100%
• Induced Defect 100%
• Contour Mapping 100%
• Carrier Lifetime 100%
• Energy Engineering 50%
• Photovoltaics 50%
• Passivation 50%
• Process Step 50%
• Based Solar Cell 50%
• Surface Recombination Velocity 50%
• Injection Level 50%
• Temperature Time 50%
• Bulk Degradation 50%
• Energy Defect 50%
• Electron Diffusion 50%
• Silicon Wafer 50%
• Room Temperature 50%
• Electron Capture 50%
• Market Share 50%
• Solar Cell 50%

Material Science

• Silicon 100%
• Surface (Surface Science) 50%
• Carrier Lifetime 20%
• Solar Cell 10%
• Photovoltaics 10%
• Boron 10%
• Silicon Solar Cell 10%
• Silicon Wafer 10%
• Vacancy Defect 10%
• Device Efficiency 10%