Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si

Vincenzo LaSalvia; Jorge Ochoa; Paul Stradins; Mariana Bertoni

doi:10.1109/PVSC45281.2020.9300530

Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si

Vincenzo LaSalvia, Jorge Ochoa, Paul Stradins, Mariana Bertoni

Chemistry and Nanoscience

Arizona State University

Research output: Contribution to conference › Paper › peer-review

Abstract

High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (Et) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.

Original language	American English
Pages	2021-2024
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300530 https://doi.org/10.1109/PVSC45281.2020.9300530
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

NREL/CP-5900-79472

Keywords

bulk lifetime
defect characterization
DPCM
Tabula Rasa
thermally induced degradation

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title = "Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si",

abstract = "High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (Et) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.",

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T1 - Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si

AU - LaSalvia, Vincenzo

AU - Ochoa, Jorge

AU - Stradins, Paul

AU - Bertoni, Mariana

PY - 2020/6/14

Y1 - 2020/6/14

N2 - High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (Et) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.

AB - High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (Et) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.

KW - bulk lifetime

KW - defect characterization

KW - DPCM

KW - Tabula Rasa

KW - thermally induced degradation

UR - http://www.scopus.com/inward/record.url?scp=85099594280&partnerID=8YFLogxK

U2 - 10.1109/PVSC45281.2020.9300530

DO - 10.1109/PVSC45281.2020.9300530

M3 - Paper

AN - SCOPUS:85099594280

SP - 2021

EP - 2024

T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Y2 - 15 June 2020 through 21 August 2020

ER -

Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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