Unusual Capacitance Emission Transients in CIGS Caused by Large Defect Entropy Changes

David L. Young; Kannan Ramanathan; Richard S. Crandall

Unusual Capacitance Emission Transients in CIGS Caused by Large Defect Entropy Changes

David L. Young, Kannan Ramanathan, Richard S. Crandall

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

Capacitance transient data from bias-pulse experiments on CdS/CIGS solar cells show an unusual behavior at high temperatures. Above 350K a minority carrier trap, with a larger activation energy than a majority carrier trap, emits faster than the lower activation-energy minority trap. A simple enthalpy model for trap emission cannot explain this counterintuitive behavior, but the more complete Gibbs free energy model that includes entropy can explain it. We show that entropy plays a major role in carrier emission from traps in CIGS.

Original language	American English
Pages	259-262
Number of pages	4
State	Published - 2005
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 3 Jan 2005 → 7 Jan 2005

Conference

Conference	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	3/01/05 → 7/01/05

Bibliographical note

For preprint version see NREL/CP-520-37359

NREL Publication Number

NREL/CP-520-38867

Cite this

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title = "Unusual Capacitance Emission Transients in CIGS Caused by Large Defect Entropy Changes",

abstract = "Capacitance transient data from bias-pulse experiments on CdS/CIGS solar cells show an unusual behavior at high temperatures. Above 350K a minority carrier trap, with a larger activation energy than a majority carrier trap, emits faster than the lower activation-energy minority trap. A simple enthalpy model for trap emission cannot explain this counterintuitive behavior, but the more complete Gibbs free energy model that includes entropy can explain it. We show that entropy plays a major role in carrier emission from traps in CIGS.",

author = "Young, {David L.} and Kannan Ramanathan and Crandall, {Richard S.}",

note = "For preprint version see NREL/CP-520-37359; 31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

year = "2005",

language = "American English",

pages = "259--262",

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T1 - Unusual Capacitance Emission Transients in CIGS Caused by Large Defect Entropy Changes

AU - Young, David L.

AU - Ramanathan, Kannan

AU - Crandall, Richard S.

N1 - For preprint version see NREL/CP-520-37359

PY - 2005

Y1 - 2005

N2 - Capacitance transient data from bias-pulse experiments on CdS/CIGS solar cells show an unusual behavior at high temperatures. Above 350K a minority carrier trap, with a larger activation energy than a majority carrier trap, emits faster than the lower activation-energy minority trap. A simple enthalpy model for trap emission cannot explain this counterintuitive behavior, but the more complete Gibbs free energy model that includes entropy can explain it. We show that entropy plays a major role in carrier emission from traps in CIGS.

AB - Capacitance transient data from bias-pulse experiments on CdS/CIGS solar cells show an unusual behavior at high temperatures. Above 350K a minority carrier trap, with a larger activation energy than a majority carrier trap, emits faster than the lower activation-energy minority trap. A simple enthalpy model for trap emission cannot explain this counterintuitive behavior, but the more complete Gibbs free energy model that includes entropy can explain it. We show that entropy plays a major role in carrier emission from traps in CIGS.

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M3 - Paper

AN - SCOPUS:27944481804

SP - 259

EP - 262

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Unusual Capacitance Emission Transients in CIGS Caused by Large Defect Entropy Changes

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this