Use of a GaAsSb Buffer Layer for the Formation of Small, Uniform, and Dense InAs Quantum Dots

Keun Yong Ban; Stephen P. Bremner; Guangming Liu; Som N. Dahal; Patricia C. Dippo; Andrew G. Norman; Christiana B. Honsberg

doi:10.1063/1.3409691

Use of a GaAsSb Buffer Layer for the Formation of Small, Uniform, and Dense InAs Quantum Dots

Keun Yong Ban, Stephen P. Bremner, Guangming Liu, Som N. Dahal, Patricia C. Dippo, Andrew G. Norman, Christiana B. Honsberg

Materials Science

Research output: Contribution to journal › Article › peer-review

41 Scopus Citations

Abstract

InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs_0.77 Sb_0.23 buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant.

Original language	American English
Article number	183101
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	18
DOIs	https://doi.org/10.1063/1.3409691 https://doi.org/10.1063/1.3409691
State	Published - 2010

NREL Publication Number

NREL/JA-520-48475

Keywords

increasing Sb content
quantum dots
surfactant

Access to Document

Cite this

@article{4c5f117a4ca54bffaa6c36188b88ee8a,

title = "Use of a GaAsSb Buffer Layer for the Formation of Small, Uniform, and Dense InAs Quantum Dots",

abstract = "InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs0.77 Sb0.23 buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant.",

keywords = "increasing Sb content, quantum dots, surfactant",

author = "Ban, {Keun Yong} and Bremner, {Stephen P.} and Guangming Liu and Dahal, {Som N.} and Dippo, {Patricia C.} and Norman, {Andrew G.} and Honsberg, {Christiana B.}",

year = "2010",

doi = "10.1063/1.3409691",

language = "American English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Use of a GaAsSb Buffer Layer for the Formation of Small, Uniform, and Dense InAs Quantum Dots

AU - Ban, Keun Yong

AU - Bremner, Stephen P.

AU - Liu, Guangming

AU - Dahal, Som N.

AU - Dippo, Patricia C.

AU - Norman, Andrew G.

AU - Honsberg, Christiana B.

PY - 2010

Y1 - 2010

N2 - InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs0.77 Sb0.23 buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant.

AB - InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs0.77 Sb0.23 buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant.

KW - increasing Sb content

KW - quantum dots

KW - surfactant

UR - http://www.scopus.com/inward/record.url?scp=77952872341&partnerID=8YFLogxK

U2 - 10.1063/1.3409691

DO - 10.1063/1.3409691

M3 - Article

AN - SCOPUS:77952872341

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 183101

ER -

Use of a GaAsSb Buffer Layer for the Formation of Small, Uniform, and Dense InAs Quantum Dots

Abstract

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this