Use of a GaAsSb Buffer Layer for the Formation of Small, Uniform, and Dense InAs Quantum Dots: Article No. 183101

Keun-Yong Ban; Stephen Bremner; Guangming Liu; Som Dahal; Christiana Honsberg

doi:10.1063/1.3409691

Use of a GaAsSb Buffer Layer for the Formation of Small, Uniform, and Dense InAs Quantum Dots: Article No. 183101

Keun-Yong Ban, Stephen Bremner, Guangming Liu, Som Dahal, Christiana Honsberg

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	18
DOIs	https://doi.org/10.1063/1.3409691
State	Published - 2010

NREL Publication Number

NREL/JA-520-48475

Keywords

increasing Sb content
quantum dots
surfactant

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10.1063/1.3409691

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title = "Use of a GaAsSb Buffer Layer for the Formation of Small, Uniform, and Dense InAs Quantum Dots: Article No. 183101",

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author = "Keun-Yong Ban and Stephen Bremner and Guangming Liu and Som Dahal and Christiana Honsberg",

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language = "American English",

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journal = "Applied Physics Letters",

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AU - Liu, Guangming

AU - Dahal, Som

AU - Honsberg, Christiana

PY - 2010

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KW - increasing Sb content

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KW - surfactant

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DO - 10.1063/1.3409691

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SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

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Use of a GaAsSb Buffer Layer for the Formation of Small, Uniform, and Dense InAs Quantum Dots: Article No. 183101

NREL Publication Number

Keywords

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