Use of an Ion Gauge Beam Flux Monitor for Resistivity Control in CuInSe2 Grown by Molecular Beam Epitaxy

C. Y. Huang; S. M. Morse; A. H. Clark; L. L. Kazmerski

doi:10.1016/0379-6787(82)90066-7

Use of an Ion Gauge Beam Flux Monitor for Resistivity Control in CuInSe2 Grown by Molecular Beam Epitaxy

C. Y. Huang, S. M. Morse, A. H. Clark, L. L. Kazmerski

Materials Science

University of Maine

Research output: Contribution to journal › Article › peer-review

12 Scopus Citations

Abstract

We have constructed and utilized a miniature ion gauge to set the copper, indium and selenium fluxes for the growth of CuInSe₂ onto CdS to form solar photovoltaic heterojunctions. Resistivities from 0.01 Ω cm n type to 0.001 Ω cm p type can be reliably achieved to within a factor of 10 of the desired value. The copper-to-indium arrival rate ratio is critical in determining the layer resistivity of p-type material, with a high copper-to-indium ratio generally giving low resistivity. The selenium arrival rate is also important, however, in that low selenium rates always lead to n-type layers, independent of the copper-to-indium arrival rate ratio.

Original language	American English
Pages (from-to)	191-195
Number of pages	5
Journal	Solar Cells
Volume	6
Issue number	2
DOIs	https://doi.org/10.1016/0379-6787(82)90066-7 https://doi.org/10.1016/0379-6787(82)90066-7
State	Published - 1982

Bibliographical note

Work performed by University of Maine, Orono, Maine, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/JA-213-4273

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Cite this

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title = "Use of an Ion Gauge Beam Flux Monitor for Resistivity Control in CuInSe2 Grown by Molecular Beam Epitaxy",

abstract = "We have constructed and utilized a miniature ion gauge to set the copper, indium and selenium fluxes for the growth of CuInSe2 onto CdS to form solar photovoltaic heterojunctions. Resistivities from 0.01 Ω cm n type to 0.001 Ω cm p type can be reliably achieved to within a factor of 10 of the desired value. The copper-to-indium arrival rate ratio is critical in determining the layer resistivity of p-type material, with a high copper-to-indium ratio generally giving low resistivity. The selenium arrival rate is also important, however, in that low selenium rates always lead to n-type layers, independent of the copper-to-indium arrival rate ratio.",

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T1 - Use of an Ion Gauge Beam Flux Monitor for Resistivity Control in CuInSe2 Grown by Molecular Beam Epitaxy

AU - Huang, C. Y.

AU - Morse, S. M.

AU - Clark, A. H.

AU - Kazmerski, L. L.

N1 - Work performed by University of Maine, Orono, Maine, and Solar Energy Research Institute, Golden, Colorado

PY - 1982

Y1 - 1982

N2 - We have constructed and utilized a miniature ion gauge to set the copper, indium and selenium fluxes for the growth of CuInSe2 onto CdS to form solar photovoltaic heterojunctions. Resistivities from 0.01 Ω cm n type to 0.001 Ω cm p type can be reliably achieved to within a factor of 10 of the desired value. The copper-to-indium arrival rate ratio is critical in determining the layer resistivity of p-type material, with a high copper-to-indium ratio generally giving low resistivity. The selenium arrival rate is also important, however, in that low selenium rates always lead to n-type layers, independent of the copper-to-indium arrival rate ratio.

AB - We have constructed and utilized a miniature ion gauge to set the copper, indium and selenium fluxes for the growth of CuInSe2 onto CdS to form solar photovoltaic heterojunctions. Resistivities from 0.01 Ω cm n type to 0.001 Ω cm p type can be reliably achieved to within a factor of 10 of the desired value. The copper-to-indium arrival rate ratio is critical in determining the layer resistivity of p-type material, with a high copper-to-indium ratio generally giving low resistivity. The selenium arrival rate is also important, however, in that low selenium rates always lead to n-type layers, independent of the copper-to-indium arrival rate ratio.

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DO - 10.1016/0379-6787(82)90066-7

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SN - 0379-6787

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JF - Solar Cells

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ER -

Use of an Ion Gauge Beam Flux Monitor for Resistivity Control in CuInSe2 Grown by Molecular Beam Epitaxy

Abstract

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