Use of an Ion Gauge Beam Flux Monitor for Resistivity Control in CuInSe2 Grown by Molecular Beam Epitaxy

C. Y. Huang; S. M. Morse; A. H. Clark; L. L. Kazmerski

doi:10.1016/0379-6787(82)90066-7

Use of an Ion Gauge Beam Flux Monitor for Resistivity Control in CuInSe2 Grown by Molecular Beam Epitaxy

C. Y. Huang
, S. M. Morse
, A. H. Clark
, L. L. Kazmerski

Materials Science

University of Maine

Research output: Contribution to journal › Article › peer-review

12 Scopus Citations

Abstract

We have constructed and utilized a miniature ion gauge to set the copper, indium and selenium fluxes for the growth of CuInSe₂ onto CdS to form solar photovoltaic heterojunctions. Resistivities from 0.01 Ω cm n type to 0.001 Ω cm p type can be reliably achieved to within a factor of 10 of the desired value. The copper-to-indium arrival rate ratio is critical in determining the layer resistivity of p-type material, with a high copper-to-indium ratio generally giving low resistivity. The selenium arrival rate is also important, however, in that low selenium rates always lead to n-type layers, independent of the copper-to-indium arrival rate ratio.

Original language	American English
Pages (from-to)	191-195
Number of pages	5
Journal	Solar Cells
Volume	6
Issue number	2
DOIs	https://doi.org/10.1016/0379-6787(82)90066-7 https://doi.org/10.1016/0379-6787(82)90066-7
State	Published - 1982

Bibliographical note

Work performed by University of Maine, Orono, Maine, and Solar Energy Research Institute, Golden, Colorado

NLR Publication Number

ACNR/JA-213-4273

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@article{f30b3a1b54d84900865b51fac1cec869,

title = "Use of an Ion Gauge Beam Flux Monitor for Resistivity Control in CuInSe2 Grown by Molecular Beam Epitaxy",

abstract = "We have constructed and utilized a miniature ion gauge to set the copper, indium and selenium fluxes for the growth of CuInSe2 onto CdS to form solar photovoltaic heterojunctions. Resistivities from 0.01 Ω cm n type to 0.001 Ω cm p type can be reliably achieved to within a factor of 10 of the desired value. The copper-to-indium arrival rate ratio is critical in determining the layer resistivity of p-type material, with a high copper-to-indium ratio generally giving low resistivity. The selenium arrival rate is also important, however, in that low selenium rates always lead to n-type layers, independent of the copper-to-indium arrival rate ratio.",

author = "Huang, \{C. Y.\} and Morse, \{S. M.\} and Clark, \{A. H.\} and Kazmerski, \{L. L.\}",

note = "Work performed by University of Maine, Orono, Maine, and Solar Energy Research Institute, Golden, Colorado",

year = "1982",

doi = "10.1016/0379-6787(82)90066-7",

language = "American English",

volume = "6",

pages = "191--195",

journal = "Solar Cells",

issn = "0379-6787",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Use of an Ion Gauge Beam Flux Monitor for Resistivity Control in CuInSe2 Grown by Molecular Beam Epitaxy

AU - Huang, C. Y.

AU - Morse, S. M.

AU - Clark, A. H.

AU - Kazmerski, L. L.

N1 - Work performed by University of Maine, Orono, Maine, and Solar Energy Research Institute, Golden, Colorado

PY - 1982

Y1 - 1982

N2 - We have constructed and utilized a miniature ion gauge to set the copper, indium and selenium fluxes for the growth of CuInSe2 onto CdS to form solar photovoltaic heterojunctions. Resistivities from 0.01 Ω cm n type to 0.001 Ω cm p type can be reliably achieved to within a factor of 10 of the desired value. The copper-to-indium arrival rate ratio is critical in determining the layer resistivity of p-type material, with a high copper-to-indium ratio generally giving low resistivity. The selenium arrival rate is also important, however, in that low selenium rates always lead to n-type layers, independent of the copper-to-indium arrival rate ratio.

AB - We have constructed and utilized a miniature ion gauge to set the copper, indium and selenium fluxes for the growth of CuInSe2 onto CdS to form solar photovoltaic heterojunctions. Resistivities from 0.01 Ω cm n type to 0.001 Ω cm p type can be reliably achieved to within a factor of 10 of the desired value. The copper-to-indium arrival rate ratio is critical in determining the layer resistivity of p-type material, with a high copper-to-indium ratio generally giving low resistivity. The selenium arrival rate is also important, however, in that low selenium rates always lead to n-type layers, independent of the copper-to-indium arrival rate ratio.

UR - https://www.scopus.com/pages/publications/0020159679

U2 - 10.1016/0379-6787(82)90066-7

DO - 10.1016/0379-6787(82)90066-7

M3 - Article

AN - SCOPUS:0020159679

SN - 0379-6787

VL - 6

SP - 191

EP - 195

JO - Solar Cells

JF - Solar Cells

IS - 2

ER -

Use of an Ion Gauge Beam Flux Monitor for Resistivity Control in CuInSe2 Grown by Molecular Beam Epitaxy

Abstract

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