Use of Electron Channeling Patterns for Process Optimization of Low-Temperature Epitaxial Silicon Using Hot-Wire Chemical Vapor Deposition

Use of Electron Channeling Patterns for Process Optimization of Low-Temperature Epitaxial Silicon Using Hot-Wire Chemical Vapor Deposition

Research output: Contribution to conference › Paper

Original language	American English
Pages	135-140
Number of pages	6
State	Published - 1999
Event	Epitaxial Growth: Principles and Applications: Materials Research Society Spring Conference - San Francisco, California Duration: 6 Apr 1999 → 10 Apr 1999

Conference

Conference	Epitaxial Growth: Principles and Applications: Materials Research Society Spring Conference
City	San Francisco, California
Period	6/04/99 → 10/04/99

NREL Publication Number

NREL/CP-520-27862

Cite this

@conference{ca2cc47b5c274b758dfb8ccc512956bd,

title = "Use of Electron Channeling Patterns for Process Optimization of Low-Temperature Epitaxial Silicon Using Hot-Wire Chemical Vapor Deposition",

author = "NREL",

year = "1999",

language = "American English",

pages = "135--140",

note = "Epitaxial Growth: Principles and Applications: Materials Research Society Spring Conference ; Conference date: 06-04-1999 Through 10-04-1999",

}