Use of n-Type (Cu2Se)x(In2Se3)1-x Ordered Defect Chalcopyrite Films for Solar Cell Absorber Layers

doi:10.1016/0927-0248(95)00109-3

Use of n-Type (Cu2Se)x(In2Se3)1-x Ordered Defect Chalcopyrite Films for Solar Cell Absorber Layers

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Abstract

The special attributes of CuIn3Se5 and related In-rich compounds from the (Cu2Se)x(In2Se3)1-x pseudobinary sytem are exploited for an absorber layer in a new thin-film photovoltaic cell. Single phase CuIn3Se5 films are synthesized by co-evaporation. Bi-layered n-type films from the (Cu2Se)x(In2Se3)1-x pseudobinary system with Cu-rich surfaces and 0.5..gtoreq..X..gtoreq..0.1, are synthesized bysequential deposition. An electrochemical approach, first developed for CuInSe2, is employed to construct n-(Cu2Se)x(In2Se3)1-x/p-CuISe3 heterojunctions. This approach leads to a remarkably uniform, clean np-heterointerface and a rough outer surface conducive to light trapping. EPMA, SIMS profiles and XRD analysis examine the (Cu2Se)x(In2Se3)1-x films and the CuISe3 overlayer. EBIC and I-Vanalyses investigate the formation of an electrically active n-CuIn3Se5/p-CuIse3 junction.

Original language	American English
Pages (from-to)	325-334
Number of pages	10
Journal	Solar Energy Materials and Solar Cells
Volume	41/42
Issue number	1-4
DOIs	https://doi.org/10.1016/0927-0248(95)00109-3
State	Published - 1996

NREL Publication Number

NREL/JA-21768

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10.1016/0927-0248(95)00109-3

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@article{d80ae8a0e295405e8a3c892b7d4fb7f4,

title = "Use of n-Type (Cu2Se)x(In2Se3)1-x Ordered Defect Chalcopyrite Films for Solar Cell Absorber Layers",

abstract = "The special attributes of CuIn3Se5 and related In-rich compounds from the (Cu2Se)x(In2Se3)1-x pseudobinary sytem are exploited for an absorber layer in a new thin-film photovoltaic cell. Single phase CuIn3Se5 films are synthesized by co-evaporation. Bi-layered n-type films from the (Cu2Se)x(In2Se3)1-x pseudobinary system with Cu-rich surfaces and 0.5..gtoreq..X..gtoreq..0.1, are synthesized bysequential deposition. An electrochemical approach, first developed for CuInSe2, is employed to construct n-(Cu2Se)x(In2Se3)1-x/p-CuISe3 heterojunctions. This approach leads to a remarkably uniform, clean np-heterointerface and a rough outer surface conducive to light trapping. EPMA, SIMS profiles and XRD analysis examine the (Cu2Se)x(In2Se3)1-x films and the CuISe3 overlayer. EBIC and I-Vanalyses investigate the formation of an electrically active n-CuIn3Se5/p-CuIse3 junction.",

author = "NREL",

year = "1996",

doi = "10.1016/0927-0248(95)00109-3",

language = "American English",

volume = "41/42",

pages = "325--334",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Use of n-Type (Cu2Se)x(In2Se3)1-x Ordered Defect Chalcopyrite Films for Solar Cell Absorber Layers

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - The special attributes of CuIn3Se5 and related In-rich compounds from the (Cu2Se)x(In2Se3)1-x pseudobinary sytem are exploited for an absorber layer in a new thin-film photovoltaic cell. Single phase CuIn3Se5 films are synthesized by co-evaporation. Bi-layered n-type films from the (Cu2Se)x(In2Se3)1-x pseudobinary system with Cu-rich surfaces and 0.5..gtoreq..X..gtoreq..0.1, are synthesized bysequential deposition. An electrochemical approach, first developed for CuInSe2, is employed to construct n-(Cu2Se)x(In2Se3)1-x/p-CuISe3 heterojunctions. This approach leads to a remarkably uniform, clean np-heterointerface and a rough outer surface conducive to light trapping. EPMA, SIMS profiles and XRD analysis examine the (Cu2Se)x(In2Se3)1-x films and the CuISe3 overlayer. EBIC and I-Vanalyses investigate the formation of an electrically active n-CuIn3Se5/p-CuIse3 junction.

AB - The special attributes of CuIn3Se5 and related In-rich compounds from the (Cu2Se)x(In2Se3)1-x pseudobinary sytem are exploited for an absorber layer in a new thin-film photovoltaic cell. Single phase CuIn3Se5 films are synthesized by co-evaporation. Bi-layered n-type films from the (Cu2Se)x(In2Se3)1-x pseudobinary system with Cu-rich surfaces and 0.5..gtoreq..X..gtoreq..0.1, are synthesized bysequential deposition. An electrochemical approach, first developed for CuInSe2, is employed to construct n-(Cu2Se)x(In2Se3)1-x/p-CuISe3 heterojunctions. This approach leads to a remarkably uniform, clean np-heterointerface and a rough outer surface conducive to light trapping. EPMA, SIMS profiles and XRD analysis examine the (Cu2Se)x(In2Se3)1-x films and the CuISe3 overlayer. EBIC and I-Vanalyses investigate the formation of an electrically active n-CuIn3Se5/p-CuIse3 junction.

U2 - 10.1016/0927-0248(95)00109-3

DO - 10.1016/0927-0248(95)00109-3

M3 - Article

SN - 0927-0248

VL - 41/42

SP - 325

EP - 334

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 1-4

ER -

Use of n-Type (Cu2Se)x(In2Se3)1-x Ordered Defect Chalcopyrite Films for Solar Cell Absorber Layers

Abstract

NREL Publication Number

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