Use of the Effective Heat of Formation Model to Determine Phase Formation Sequences of In-Se, Ga-Se, Cu-Se, and Ga-In Multilayer Thin Films

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    Abstract

    Multilayer thin films of indium-selenium, gallium-selenium, copper-selenium, and gallium-indium have been analyzed for the purpose of understanding thin film phase transformations that are relevant to the production of Cu(In,Ga)Se2 photovoltaic solar cells. For example, the intermetallic phases that are present during selenization of precursor films will affect film microstructure and theresulting film properties. Throughout this research, the effective heat of formation model has been used to predict phase formation sequences. The accuracy of these predictions was explored experimentally. By using differential thermal analysis, the reactions of product film formation were examined. X-ray diffraction was used to determine reactant and product phases.
    Original languageAmerican English
    Pages (from-to)1334-1340
    Number of pages7
    JournalJournal of Electronic Materials
    Volume27
    Issue number12
    DOIs
    StatePublished - 1998

    NREL Publication Number

    • NREL/JA-520-26553

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