Using Amorphous Zinc-Tin Oxide Alloys in the Emitter Structure of CIGS PV Devices

Peter A. Hersh, Maikel Van Hest, Vincent Bollinger, Joseph J. Berry, David S. Ginley, Billy J. Stanbery

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations

Abstract

The typical CIGS device structure employs a molybdenum back contact and a CdS/ZnO/ZnO:Al emitter structure. In this work the undoped ZnO is replaced with amorphous zinc-tin oxide alloys (ZTO). Varying composition and deposition method of the ZTO can provide a wide range of band gap (3.3-3.9eV) and work function (4.3-5.2eV), while remaining amorphous. The flexibility of the ZTO provides the opportunity to tune the bands to optimize band-edge and Fermi level alignment. Devices demonstrated to date with ZTO alloy composition have yielded a maximum efficiency of 11.9% with an average of 11.3%, which is very similar to comparable devices with undoped ZnO that have a maximum efficiency of 12.0% with an average of 11.3%. On going optimization may further improve the results.

Original languageAmerican English
Pages1673-1676
Number of pages4
DOIs
StatePublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: 3 Jun 20128 Jun 2012

Conference

Conference38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/TerritoryUnited States
CityAustin, TX
Period3/06/128/06/12

NREL Publication Number

  • NREL/CP-5200-57526

Keywords

  • amorphous materials
  • copper compounds
  • photovoltaic cells
  • sputtering
  • tin compounds
  • zinc compounds

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