Using Diffusion-Reaction Simulation to Study the Formation and Self-Compensation Mechanism of Cu Doping in CdTe

Jihui Yang; D. Guo; R. Akis; D. Brinkman; A. Moore; D. Krasikov; I. Sankin; C. Ringhofer; D. Vasileska

doi:10.1109/PVSC.2016.7749970

Using Diffusion-Reaction Simulation to Study the Formation and Self-Compensation Mechanism of Cu Doping in CdTe

Jihui Yang, D. Guo, R. Akis, D. Brinkman, A. Moore, D. Krasikov, I. Sankin, C. Ringhofer, D. Vasileska

Materials Science

Research output: Contribution to conference › Paper

2 Scopus Citations

Abstract

An improved model of copper p-type doping in CdTe absorbers is proposed that accounts for the mechanisms related to tightly bound Cu(i)-Cu(Cd) and Cd(i)-Cu(Cd) complexes that both limit diffusion and cause self-compensation of Cu species. The new model explains apparent discrepancy between DFT-calculated and fitted diffusion parameters of Cu reported in our previous work, and allows for better understanding of performance and metastabilities in CdTe PV devices.

Original language	American English
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2016.7749970
State	Published - 2016
Event	2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) - Portland, Oregon Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
City	Portland, Oregon
Period	5/06/16 → 10/06/16

NREL Publication Number

NREL/CP-5K00-67942

Keywords

CdTe
copper
diffusion
numerical simulations
photovoltaic cells
semiconductor device doping

Access to Document

10.1109/PVSC.2016.7749970

Cite this

@conference{16291fbc958a4c35890a9de0be743c40,

title = "Using Diffusion-Reaction Simulation to Study the Formation and Self-Compensation Mechanism of Cu Doping in CdTe",

abstract = "An improved model of copper p-type doping in CdTe absorbers is proposed that accounts for the mechanisms related to tightly bound Cu(i)-Cu(Cd) and Cd(i)-Cu(Cd) complexes that both limit diffusion and cause self-compensation of Cu species. The new model explains apparent discrepancy between DFT-calculated and fitted diffusion parameters of Cu reported in our previous work, and allows for better understanding of performance and metastabilities in CdTe PV devices.",

keywords = "CdTe, copper, diffusion, numerical simulations, photovoltaic cells, semiconductor device doping",

author = "Jihui Yang and D. Guo and R. Akis and D. Brinkman and A. Moore and D. Krasikov and I. Sankin and C. Ringhofer and D. Vasileska",

year = "2016",

doi = "10.1109/PVSC.2016.7749970",

language = "American English",

note = "2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) ; Conference date: 05-06-2016 Through 10-06-2016",

}

Yang, J, Guo, D, Akis, R, Brinkman, D, Moore, A, Krasikov, D, Sankin, I, Ringhofer, C & Vasileska, D 2016, 'Using Diffusion-Reaction Simulation to Study the Formation and Self-Compensation Mechanism of Cu Doping in CdTe', Paper presented at 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, Oregon, 5/06/16 - 10/06/16. https://doi.org/10.1109/PVSC.2016.7749970

TY - CONF

T1 - Using Diffusion-Reaction Simulation to Study the Formation and Self-Compensation Mechanism of Cu Doping in CdTe

AU - Yang, Jihui

AU - Guo, D.

AU - Akis, R.

AU - Brinkman, D.

AU - Moore, A.

AU - Krasikov, D.

AU - Sankin, I.

AU - Ringhofer, C.

AU - Vasileska, D.

PY - 2016

Y1 - 2016

N2 - An improved model of copper p-type doping in CdTe absorbers is proposed that accounts for the mechanisms related to tightly bound Cu(i)-Cu(Cd) and Cd(i)-Cu(Cd) complexes that both limit diffusion and cause self-compensation of Cu species. The new model explains apparent discrepancy between DFT-calculated and fitted diffusion parameters of Cu reported in our previous work, and allows for better understanding of performance and metastabilities in CdTe PV devices.

AB - An improved model of copper p-type doping in CdTe absorbers is proposed that accounts for the mechanisms related to tightly bound Cu(i)-Cu(Cd) and Cd(i)-Cu(Cd) complexes that both limit diffusion and cause self-compensation of Cu species. The new model explains apparent discrepancy between DFT-calculated and fitted diffusion parameters of Cu reported in our previous work, and allows for better understanding of performance and metastabilities in CdTe PV devices.

KW - CdTe

KW - copper

KW - diffusion

KW - numerical simulations

KW - photovoltaic cells

KW - semiconductor device doping

U2 - 10.1109/PVSC.2016.7749970

DO - 10.1109/PVSC.2016.7749970

M3 - Paper

T2 - 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

Y2 - 5 June 2016 through 10 June 2016

ER -

Using Diffusion-Reaction Simulation to Study the Formation and Self-Compensation Mechanism of Cu Doping in CdTe

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this