Using Hole Injection Layers for Decreased Metastability and Higher Performance in Cu(In,Ga)Se2 Devices

Ingrid Repins; Stephen Glynn; Karen Bowers; Bart Stevens; Craig Perkins; Lorelle Mansfield

doi:10.1016/j.solmat.2020.110597

Using Hole Injection Layers for Decreased Metastability and Higher Performance in Cu(In,Ga)Se2 Devices

Ingrid Repins, Stephen Glynn, Karen Bowers, Bart Stevens, Craig Perkins, Lorelle Mansfield

Materials Science

Research output: Contribution to journal › Article › peer-review

5 Scopus Citations

Abstract

Modifications to the buffer structure in Cu(In,Ga)Se₂ (CIGS) solar cells are examined in terms of power conversion efficiency and metastability. Varying amounts of thin hole-injecting layers are introduced at different locations in the CIGS/Zn(O,S) device structure. It is found that such layers simultaneously increase performance and decrease metastability. The most effective variant produces devices without metastability and with higher efficiency than the CdS-only controls. The most effective location for hole injection is found to be between the Zn(O,S) buffer and the transparent conductor. At this location, passivation of the CIGS surface is not a function of the hole injection layer, and thus a variety of materials with appropriate band-edge energies should achieve the same purpose.

Original language	American English
Article number	110597
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	215
DOIs	https://doi.org/10.1016/j.solmat.2020.110597 https://doi.org/10.1016/j.solmat.2020.110597
State	Published - 15 Sep 2020

Bibliographical note

Publisher Copyright:
© 2020

NREL Publication Number

NREL/JA-5K00-75622

Keywords

buffer
CdS
CIGS
efficiency
hole injection
metastability
ZnS

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Using Hole Injection Layers for Decreased Metastability and Higher Performance in Cu(In,Ga)Se2 Devices",

abstract = "Modifications to the buffer structure in Cu(In,Ga)Se2 (CIGS) solar cells are examined in terms of power conversion efficiency and metastability. Varying amounts of thin hole-injecting layers are introduced at different locations in the CIGS/Zn(O,S) device structure. It is found that such layers simultaneously increase performance and decrease metastability. The most effective variant produces devices without metastability and with higher efficiency than the CdS-only controls. The most effective location for hole injection is found to be between the Zn(O,S) buffer and the transparent conductor. At this location, passivation of the CIGS surface is not a function of the hole injection layer, and thus a variety of materials with appropriate band-edge energies should achieve the same purpose.",

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author = "Ingrid Repins and Stephen Glynn and Karen Bowers and Bart Stevens and Craig Perkins and Lorelle Mansfield",

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doi = "10.1016/j.solmat.2020.110597",

language = "American English",

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T1 - Using Hole Injection Layers for Decreased Metastability and Higher Performance in Cu(In,Ga)Se2 Devices

AU - Repins, Ingrid

AU - Glynn, Stephen

AU - Bowers, Karen

AU - Stevens, Bart

AU - Perkins, Craig

AU - Mansfield, Lorelle

PY - 2020/9/15

Y1 - 2020/9/15

N2 - Modifications to the buffer structure in Cu(In,Ga)Se2 (CIGS) solar cells are examined in terms of power conversion efficiency and metastability. Varying amounts of thin hole-injecting layers are introduced at different locations in the CIGS/Zn(O,S) device structure. It is found that such layers simultaneously increase performance and decrease metastability. The most effective variant produces devices without metastability and with higher efficiency than the CdS-only controls. The most effective location for hole injection is found to be between the Zn(O,S) buffer and the transparent conductor. At this location, passivation of the CIGS surface is not a function of the hole injection layer, and thus a variety of materials with appropriate band-edge energies should achieve the same purpose.

AB - Modifications to the buffer structure in Cu(In,Ga)Se2 (CIGS) solar cells are examined in terms of power conversion efficiency and metastability. Varying amounts of thin hole-injecting layers are introduced at different locations in the CIGS/Zn(O,S) device structure. It is found that such layers simultaneously increase performance and decrease metastability. The most effective variant produces devices without metastability and with higher efficiency than the CdS-only controls. The most effective location for hole injection is found to be between the Zn(O,S) buffer and the transparent conductor. At this location, passivation of the CIGS surface is not a function of the hole injection layer, and thus a variety of materials with appropriate band-edge energies should achieve the same purpose.

KW - buffer

KW - CdS

KW - CIGS

KW - efficiency

KW - hole injection

KW - metastability

KW - ZnS

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DO - 10.1016/j.solmat.2020.110597

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JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

M1 - 110597

ER -

Using Hole Injection Layers for Decreased Metastability and Higher Performance in Cu(In,Ga)Se2 Devices

Abstract

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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