Using Hole Injection Layers for Decreased Metastability and Higher Performance in Cu(In,Ga)Se2 Devices

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Abstract

Modifications to the buffer structure in Cu(In,Ga)Se2 (CIGS) solar cells are examined in terms of power conversion efficiency and metastability. Varying amounts of thin hole-injecting layers are introduced at different locations in the CIGS/Zn(O,S) device structure. It is found that such layers simultaneously increase performance and decrease metastability. The most effective variant produces devices without metastability and with higher efficiency than the CdS-only controls. The most effective location for hole injection is found to be between the Zn(O,S) buffer and the transparent conductor. At this location, passivation of the CIGS surface is not a function of the hole injection layer, and thus a variety of materials with appropriate band-edge energies should achieve the same purpose.

Original languageAmerican English
Article number110597
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume215
DOIs
StatePublished - 15 Sep 2020

Bibliographical note

Publisher Copyright:
© 2020

NREL Publication Number

  • NREL/JA-5K00-75622

Keywords

  • buffer
  • CdS
  • CIGS
  • efficiency
  • hole injection
  • metastability
  • ZnS

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