Vacancy Complexes in Cd3As2

Anthony Rice, M. Liedke, M. Butterling, E. Hirschmann, A. Wagner, Nancy Haegel, Kirstin Alberi

Research output: Contribution to journalArticlepeer-review

1 Scopus Citations


Epitaxial growth of the three-dimensional topological semimetal Cd3As2 on semiconductor substrates enables its use and integration in device applications. Epitaxy also provides an avenue for varying and controlling point defects through modification of the chemical potential during growth. In turn, knowledge of the point defects that are generated in Cd3As2 epilayers will aid the interpretation of electron transport behavior and guide growth efforts to produce material with low defect densities. Point defects in Cd3As2 epilayers grown by molecular beam epitaxy with varying As/Cd flux ratios are probed by positron annihilation spectroscopy. We find that lower As/Cd flux ratios produce higher concentrations of point defects. Remarkably, the measurements indicate that the average defect size is larger than a monovacancy. The data presented here contribute to an evolving picture of vacancy point defects in Cd3As2 and can be used to direct future investigation of the defect-transport relationships in this emerging electronic material.

Original languageAmerican English
Article numberArticle No. 061109
Number of pages7
JournalAPL Materials
Issue number6
StatePublished - 1 Jun 2023

Bibliographical note

Publisher Copyright:
© 2023 Author(s).

NREL Publication Number

  • NREL/JA-5K00-85558


  • defect
  • topological semimetal


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