Valence-band Electronic Structure of Zn3P2 as a Function of Annealing as Studied by Synchrotron Radiation Photoemission

Art J. Nelson; L. L. Kazmerski; Mike Engelhardt; Hartmut Hochst

doi:10.1063/1.345695

Valence-band Electronic Structure of Zn3P2 as a Function of Annealing as Studied by Synchrotron Radiation Photoemission

Art J. Nelson, L. L. Kazmerski, Mike Engelhardt, Hartmut Hochst

Materials Science

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Abstract

Ultraviolet photoemission (UPS) utilizing synchrotron radiation has been used to characterize changes in the valence-band electronic structure of crystalline Zn₃P₂ as a function of annealing temperature. The Zn₃P₂ crystal was etched in bromine-methanol prior to analysis and annealing was performed in vacuum at 300 and 350 °C after sputter cleaning. The UPS spectra for the virgin material are qualitatively similar to the photoemission results for various II-VI Zn compound semiconductors and a comparison of the Zn 3d binding energies with respect to the valence band maximum is presented. The results for the virgin material and the 300 °C anneal are further compared with the theoretically predicted band structure of Zn₃P₂ as determined by a pseudopotential energy band calculation. Loss of phosphorus from the surface and the presence of elemental zinc on the surface after the 350 °C anneal is evident.

Original language	American English
Pages (from-to)	1393-1396
Number of pages	4
Journal	Journal of Applied Physics
Volume	67
Issue number	3
DOIs	https://doi.org/10.1063/1.345695 https://doi.org/10.1063/1.345695
State	Published - 1990

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, Wisconsin

NREL Publication Number

ACNR/JA-213-11548

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abstract = "Ultraviolet photoemission (UPS) utilizing synchrotron radiation has been used to characterize changes in the valence-band electronic structure of crystalline Zn3P2 as a function of annealing temperature. The Zn3P2 crystal was etched in bromine-methanol prior to analysis and annealing was performed in vacuum at 300 and 350 °C after sputter cleaning. The UPS spectra for the virgin material are qualitatively similar to the photoemission results for various II-VI Zn compound semiconductors and a comparison of the Zn 3d binding energies with respect to the valence band maximum is presented. The results for the virgin material and the 300 °C anneal are further compared with the theoretically predicted band structure of Zn3P2 as determined by a pseudopotential energy band calculation. Loss of phosphorus from the surface and the presence of elemental zinc on the surface after the 350 °C anneal is evident.",

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AU - Nelson, Art J.

AU - Kazmerski, L. L.

AU - Engelhardt, Mike

AU - Hochst, Hartmut

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, Wisconsin

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N2 - Ultraviolet photoemission (UPS) utilizing synchrotron radiation has been used to characterize changes in the valence-band electronic structure of crystalline Zn3P2 as a function of annealing temperature. The Zn3P2 crystal was etched in bromine-methanol prior to analysis and annealing was performed in vacuum at 300 and 350 °C after sputter cleaning. The UPS spectra for the virgin material are qualitatively similar to the photoemission results for various II-VI Zn compound semiconductors and a comparison of the Zn 3d binding energies with respect to the valence band maximum is presented. The results for the virgin material and the 300 °C anneal are further compared with the theoretically predicted band structure of Zn3P2 as determined by a pseudopotential energy band calculation. Loss of phosphorus from the surface and the presence of elemental zinc on the surface after the 350 °C anneal is evident.

AB - Ultraviolet photoemission (UPS) utilizing synchrotron radiation has been used to characterize changes in the valence-band electronic structure of crystalline Zn3P2 as a function of annealing temperature. The Zn3P2 crystal was etched in bromine-methanol prior to analysis and annealing was performed in vacuum at 300 and 350 °C after sputter cleaning. The UPS spectra for the virgin material are qualitatively similar to the photoemission results for various II-VI Zn compound semiconductors and a comparison of the Zn 3d binding energies with respect to the valence band maximum is presented. The results for the virgin material and the 300 °C anneal are further compared with the theoretically predicted band structure of Zn3P2 as determined by a pseudopotential energy band calculation. Loss of phosphorus from the surface and the presence of elemental zinc on the surface after the 350 °C anneal is evident.

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Valence-band Electronic Structure of Zn3P2 as a Function of Annealing as Studied by Synchrotron Radiation Photoemission

Abstract

Bibliographical note

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