Valence Band Splittings and Band Offsets of AlN, GaN, and InN

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    First-principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal-field splitting parameters .delta. CF of -217, 42, and 41 meV, respectively, and spin-orbit splitting parameters .delta. 0 of 19, 13, and 1 meV, respectively. In the zinc blende structure .delta.CF.ident.0 and .delta. 0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InNvalence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental finds are analyzed in light of these predictions.
    Original languageAmerican English
    Pages (from-to)2719-2721
    Number of pages3
    JournalApplied Physics Letters
    Issue number18
    StatePublished - 1996

    NREL Publication Number

    • NREL/JA-450-23056


    • EIADAS


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