Van der Waals Metal-Semiconductor Junction: Weak Fermi Level Pinning Enables Effective Tuning of Schottky Barrier

Yuanyue Liu, Paul Stradins, Su Huai Wei

Research output: Contribution to journalArticlepeer-review

481 Scopus Citations

Abstract

Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.

Original languageAmerican English
Article numbere1600069
Number of pages6
JournalScience Advances
Volume2
Issue number4
DOIs
StatePublished - 2016

Bibliographical note

Publisher Copyright:
© 2016 The Authors, some rights reserved.

NREL Publication Number

  • NREL/JA-5J00-66053

Keywords

  • 2D metals
  • 2D semiconductors
  • atomistic simulations
  • Fermi-level pinning
  • Schottky barrier

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