Abstract
A dry vapor treatment of CdCl2 is being developed as an alternative approach to the conventional solution CdCl2 treatment of CdS/CdTe devices. In this alternative process, the CdS/CdTe substrates are vapor treated in a close-spaced sublimation configuration. A 16-run Plackett-Burman screening experiment identified source temperature, substrate temperature, and treatment time as being the mostsignificant parameters in the process. Subsequently, a 20-run Central Composite Design showed that a source temperature of 380-390oC, a temperature gradient (DT) of 5oC, and a time of 10 minutes provides the most process tolerant combination, yielding a total-area efficiency of 12.6%. A strong interaction between DT and treatment time was also identified. The model indicated that for a small DT,device performance improved with decreasing time, whereas at larger values of DT, performance increased with increasing time.
| Original language | American English |
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| Number of pages | 8 |
| State | Published - 1998 |
| Event | National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998 |
Conference
| Conference | National Center for Photovoltaics Program Review Meeting |
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| City | Denver, Colorado |
| Period | 8/09/98 → 11/09/98 |
NLR Publication Number
- NREL/CP-520-25495