Abstract
A controllable technique for treating CdTe/CdS thin film structures to produce uniform film properties and device performance is presented. Heat treatments of physical vapor deposited CdTe/CdS thin films were carried out in an atmosphere containing CdCl/sub 2/ vapor and air, or mixtures of AR and O/sub 2/. The heat treatment reactor permitted independent control over the reaction temperature andthe CdCl/sub 2/ source temperature, hence CdCl/sub 2/ vapor phase concentration at the CdTe surface. Modelling of the thermal and mass transfer for the reactor geometry shows that at total pressure of 1 atmosphere of air, the CdCl/sub 2/ equilibrium concentration over the CdTe surface is established in less than 2 seconds and varies from 1.3 mtorr at 380 deg. C to 32.7 mtorr at 450 deg. C. Theeffects of treatment conditions on interdiffusion, grain coalescence, and device operation are presented. Devices with efficiency greater than 11% were obtained for treatment with a CdCl/sub 2/ partial pressure of 9 mtorr in the temperature range 420-430 deg. C and at oxygen partial pressures from 8 mtorr to 570 torr.
| Original language | American English |
|---|---|
| Pages | 781-784 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 1996 |
| Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
| Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
|---|---|
| City | Washington, D.C. |
| Period | 13/05/96 → 17/05/96 |
Bibliographical note
Work performed by the University of Delaware, Newark, DelawareNREL Publication Number
- NREL/CP-22402