Virtual Substrates for Wide Bandgap AlyX1-yN Growth

Engineering

• Atomic Force Microscopy 50%
• Band Gap 100%
• Buffer Layer 50%
• Coefficient of Thermal Expansion 50%
• Crystal Quality 50%
• Crystal Structure 50%
• Crystal Surface 50%
• Electrical Conductivity 50%
• Growth Temperature 50%
• High Resolution 50%
• Nitride 50%
• Nitride Layer 50%
• Operating Temperature 50%
• Power Electronics 50%
• Proof-of-Concept 50%
• Ray Diffraction 100%
• Surface Morphology 50%
• Thin Films 50%

Material Science

• Atomic Force Microscopy 50%
• Buffer Layer 50%
• Crystal Structure 50%
• Electrical Conductivity 50%
• High-Resolution Transmission Electron Microscopy 50%
• Molecular Beam Epitaxy 50%
• Nitride Compound 100%
• Surface (Surface Science) 50%
• Surface Morphology 50%
• Thermal Expansion 50%
• Thin Films 50%
• Transition Metal Carbide 50%
• X-Ray Diffraction 100%