Abstract
Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within each semiconductor layer is a sting of electrically connected photonic sub-cells. By carefully selecting the numbers of photonic sub-cells in the first and secondlayer photonic sub-cell string(s), and by carefully selecting the manner in which the sub-cells in a first and second layer photonic sub-cell string(s) are electrically connected, each of the first and second layer sub-cell strings may be made to achieve one or more substantially identical electrical characteristics.
Original language | American English |
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Patent number | 7,095,050 B2 |
State | Published - 2006 |
NREL Publication Number
- NREL/PT-520-40717
Keywords
- monolithic
- multi-band-gap devices
- voltage-matched