Abstract
Disclosed herein are compositions, methods and devices that allow for water-soluble epitaxial lift-off of III-V. Epitaxial growth of STO/SAO templates on STO (001) and Ge (001) substrates were demonstrated. Partially epitaxial GaAs growth was achieved on STO/SAO/STO substrate templates.
| Original language | American English |
|---|---|
| Patent number | 11,621,365 B2 |
| Filing date | 4/04/23 |
| State | Published - 2023 |
NREL Publication Number
- NREL/PT-5K00-85872
Keywords
- epitaxially grown
- epixial lift off
- metalorganic vapor phase epitaxy (MOVPE)
- pulsed laser deposition