Water Soluble Oxide Liftoff Layers for GaAs Photovoltaics

Andrew Norman (Inventor)

Research output: Patent


Disclosed herein are compositions, methods and devices that allow for water-soluble epitaxial lift-off of III-V. Epitaxial growth of STO/SAO templates on STO (001) and Ge (001) substrates were demonstrated. Partially epitaxial GaAs growth was achieved on STO/SAO/STO substrate templates.
Original languageAmerican English
Patent number11,621,365 B2
Filing date4/04/23
StatePublished - 2023

NREL Publication Number

  • NREL/PT-5K00-85872


  • epitaxially grown
  • epixial lift off
  • metalorganic vapor phase epitaxy (MOVPE)
  • pulsed laser deposition


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