Well Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells

M. R. Page; E. Iwaniczko; Y. Xu; Q. Wang; Y. Yan; L. Roybal; Howard M. Branz; T. H. Wang

doi:10.1109/WCPEC.2006.279750

Well Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells

M. R. Page, E. Iwaniczko, Y. Xu, Q. Wang, Y. Yan, L. Roybal, Howard M. Branz, T. H. Wang

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

27 Scopus Citations

Abstract

We have developed hydrogenated amorphous silicon (a-Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250°C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (V_oc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p-type textured silicon wafers [1].

Original language	American English
Pages	1485-1488
Number of pages	4
DOIs	https://doi.org/10.1109/WCPEC.2006.279750 https://doi.org/10.1109/WCPEC.2006.279750
State	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	7/05/06 → 12/05/06

Bibliographical note

For preprint version see NREL/CP-520-39911

NREL Publication Number

NREL/CP-520-41305

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Cite this

Page, M. R., Iwaniczko, E., Xu, Y., Wang, Q., Yan, Y., Roybal, L., Branz, H. M., & Wang, T. H. (2006). Well Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells. 1485-1488. Paper presented at 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States. https://doi.org/10.1109/WCPEC.2006.279750, https://doi.org/10.1109/WCPEC.2006.279750

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abstract = "We have developed hydrogenated amorphous silicon (a-Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250°C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p-type textured silicon wafers [1].",

author = "Page, {M. R.} and E. Iwaniczko and Y. Xu and Q. Wang and Y. Yan and L. Roybal and Branz, {Howard M.} and Wang, {T. H.}",

note = "For preprint version see NREL/CP-520-39911; 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

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language = "American English",

pages = "1485--1488",

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Page, MR, Iwaniczko, E, Xu, Y, Wang, Q, Yan, Y, Roybal, L, Branz, HM & Wang, TH 2006, 'Well Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells', Paper presented at 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 7/05/06 - 12/05/06 pp. 1485-1488. https://doi.org/10.1109/WCPEC.2006.279750, https://doi.org/10.1109/WCPEC.2006.279750

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AU - Page, M. R.

AU - Iwaniczko, E.

AU - Xu, Y.

AU - Wang, Q.

AU - Yan, Y.

AU - Roybal, L.

AU - Branz, Howard M.

AU - Wang, T. H.

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PY - 2006

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N2 - We have developed hydrogenated amorphous silicon (a-Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250°C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p-type textured silicon wafers [1].

AB - We have developed hydrogenated amorphous silicon (a-Si:H) back contacts to both p- and n-type silicon wafers, and employed them in double-heterojunction solar cells. These contacts are deposited entirely at low temperature (<250°C) and replace the standard diffused or alloyed back-surface-field contacts used in single-heterojunction (front-emitter only) cells. High-quality back contacts require excellent surface passivation, indicated by a low surface recombination velocity of minority-carriers (S) or a high open-circuit voltage (Voc). The back contact must also provide good conduction for majority carriers to the external circuit, as indicated by a high light I-V fill factor. We use hot-wire chemical vapor deposition (HWCVD) to grow a-Si:H layers for both the front emitters and back contacts. Our improved a-Si:H back contacts contribute to our recent achievement of a confirmed 18.2% efficiency in double-heterojunction silicon solar cells on p-type textured silicon wafers [1].

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T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -

Well Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells

Abstract

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