Abstract
A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.
Original language | American English |
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Patent number | 9,034,216 B2 |
Filing date | 19/05/15 |
State | Published - 2015 |
NREL Publication Number
- NREL/PT-5J00-65235