Wet-Chemical Systems and Methods for Producing Black Silicon Substrates

Matthew Page (Inventor), Vernon Yost (Inventor), Hao-Chih Yuan (Inventor)

Research output: Patent


A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.
Original languageAmerican English
Patent number9,034,216 B2
Filing date19/05/15
StatePublished - 2015

NREL Publication Number

  • NREL/PT-5J00-65235


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