Abstract
The wider-gap members of a semiconductor series such as diamond→Si→Ge or AlN→GaN→InN often cannot be doped n -type at equilibrium. We study theoretically if this is the case in the chalcopyrite family CuGaSe2 → CuInSe2, finding that: (i) Bulk CuInSe2 (CIS, Eg =1.04 eV) can be doped at equilibrium n -type either by Cd or Cl, but bulk CuGaSe2 (CGS, Eg =1.68 eV) cannot; (ii) result (i) is primarily because the Cu-vacancy pins the Fermi level in CGS farther below the conduction band minimum than it does in CIS, as explained by the "doping limit rule;" (iii) Cd doping is better than Cl doping, in that CdCu yields in CIS a higher net donor concentration than ClSe; and (iv) in general, the system shows massive compensation of acceptors (CdIII, VCu) and donors (ClSe, CdCu, InCu).
Original language | American English |
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Pages (from-to) | 5860-5862 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 24 |
DOIs | |
State | Published - 2004 |
NREL Publication Number
- NREL/JA-590-37863