Why Do Copper Precipitates Reduce Carrier Lifetimes?

Why Do Copper Precipitates Reduce Carrier Lifetimes?

Research output: Contribution to conference › Paper

Abstract

Cu-related defects in Si are studied at the ab-initio Hartree-Fock level in clusters containing up to 100 Si atoms. Interstitial Cu, substitutional Cu, and one through five Cu's trapped at an internal void modeled by the ring-hexavacancy are studied. The configurations, electronic structures, and binding energies are calculated. The origin of the electrical activity of copper precipitates isdiscussed.

Original language	American English
Pages	124-127
Number of pages	4
State	Published - 1999
Event	Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes - Breckenridge, Colorado Duration: 9 Aug 1999 → 11 Aug 1999

Conference

Conference	Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes
City	Breckenridge, Colorado
Period	9/08/99 → 11/08/99

Bibliographical note

Work performed by Texas Tech University, Lubbock, Texas

NREL Publication Number

NREL/CP-27184

Cite this

@conference{3000d5dbe32145ff9a577e7f1725e408,

title = "Why Do Copper Precipitates Reduce Carrier Lifetimes?",

abstract = "Cu-related defects in Si are studied at the ab-initio Hartree-Fock level in clusters containing up to 100 Si atoms. Interstitial Cu, substitutional Cu, and one through five Cu's trapped at an internal void modeled by the ring-hexavacancy are studied. The configurations, electronic structures, and binding energies are calculated. The origin of the electrical activity of copper precipitates isdiscussed.",

author = "NREL",

note = "Work performed by Texas Tech University, Lubbock, Texas; Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes ; Conference date: 09-08-1999 Through 11-08-1999",

year = "1999",