Why is Heavily-defected CuInSe2 a Good Opto-electronic Material: Defect Physics in CuInSe2

Why is Heavily-defected CuInSe2 a Good Opto-electronic Material: Defect Physics in CuInSe2

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Original language	American English
Pages	765-771
Number of pages	7
State	Published - 1998
Event	Ternary and Multinary Compounds: 11th International Conference on Ternary and Multinary Compounds, ICTMC-11 - Salford Duration: 8 Sep 1997 → 12 Sep 1997

Conference

Conference	Ternary and Multinary Compounds: 11th International Conference on Ternary and Multinary Compounds, ICTMC-11
City	Salford
Period	8/09/97 → 12/09/97

NREL Publication Number

NREL/CP-590-24905

Cite this

@conference{a09917c2555a43d18d0b8a2e4801a23f,

title = "Why is Heavily-defected CuInSe2 a Good Opto-electronic Material: Defect Physics in CuInSe2",

author = "NREL",

year = "1998",

language = "American English",

pages = "765--771",

note = "Ternary and Multinary Compounds: 11th International Conference on Ternary and Multinary Compounds, ICTMC-11 ; Conference date: 08-09-1997 Through 12-09-1997",

}