Why the Photoconductivity Decreases in a-SiC:H and a-SiGe:H when the Amount of Alloying Increases

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)195-203
    Number of pages9
    JournalSolar Cells
    Volume24
    Issue number1-2
    DOIs
    StatePublished - 1988

    Bibliographical note

    Work performed by Solar Energy Research Institute, Golden, Colorado; Centre National de la Recherche Scientifique, Valbonne, France; ENEA/FARE-FOTO, Portici, Italy, and Electrical Engineering Department, North Carolina A&T State University, Greensboro, North Carolina

    NREL Publication Number

    • ACNR/JA-212-10393

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